Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-26T20:25:56.683Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural and Electrical Characterization of Barium Strontium Titanate Thin Films

Published online by Cambridge University Press:  15 February 2011

Yujing Wu ,
Elizabeth G. Jacobs ,
Russell F. Pinizzotto ,
Robert Tsu ,
Hung-Yu Liu ,
Scott R. Summerfelt  and
Bruce E. Gnade
Yujing Wu
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX
Elizabeth G. Jacobs
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX
Russell F. Pinizzotto
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX
Robert Tsu
Affiliation:
Materials Science Laboratory, Texas Instruments, Dallas, TX
Hung-Yu Liu
Affiliation:
Materials Science Laboratory, Texas Instruments, Dallas, TX
Scott R. Summerfelt
Affiliation:
Materials Science Laboratory, Texas Instruments, Dallas, TX
Bruce E. Gnade
Affiliation:
Materials Science Laboratory, Texas Instruments, Dallas, TX
Get access

Abstract

The kinetics of BST thin film grain nucleation and growth caused by rapid thermal annealing have been investigated. A series of Ba0.67Sr0.33Tii0.5O3 films were deposited on Pt electrodes using a metal-organic decomposition process. The effects of anneal time and temperature on BST grain sizes were studied by altering the processing conditions during RTA. A series of films were annealed by RTA at temperatures ranging from 550°C to 950°C for times ranging from 30 to 120 seconds. Crystallographic and microstructural characterization were done using XRD and TEM. The XRD results indicated that BST grain size increased with increasing anneal temperature, but was not affected by anneal time. Plan-view TEM indicated that BST grains were imbedded in an amorphous matrix. The average grain size was on the order of 200 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 269
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Okuyama, M. and Hamakawa, Y., Int. J. Eng. Sci. 29, 391 (1991).Google Scholar
2. Haertling, G.H., J. Vac. Sci. Technol. A 9, 414 (1991).Google Scholar
3. Koyama, K., Sakuma, T., Amamichi, S. Y., Watanabe, H., Aoki, H., Ohya, S., Miyasaka, Y., and Kikkawa, T., IEEE IEDM 91, 91, 823 (1991).Google Scholar
4. Sayer, M., IEEE Ultrasonics '91 Symposium, 8 (1991).Google Scholar
5. Maniese, J.V., Micheli, A.L., Hamdi, A.H., and Vest, R.W., MRS Bull. XIV, 48 (1989).Google Scholar
6. Vest, G.M., Cone, V.P., Herzfeld, C.J., and Bhansali, A.K., Mater. Res. Soc. Symp. Pro. 72, 47 (1986).Google Scholar
7. Xu, J.J., Sheikh, A.S., and Vest, R.W., Thin Solid Films 161, 273 (1988).Google Scholar
8. Birks, L.S. and Friedmen, H., J. Appl. Phys. 17, 687 (1946).Google Scholar
9. Ikawa, H., Ceramic Trans. 32, 19 (1993).Google Scholar
10. Arlt, G., Hennings, D., and deWith, G., J. Appl. Phys. 58, 1619 (1983).Google Scholar