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Microsensors for Automotive Applications – Metrology and Test

Published online by Cambridge University Press:  15 March 2011

Gottfried Flik ,
Heinz Eisenschmid ,
Carsten Raudzis ,
Frank Schatz ,
Winfried Schoenenborn  and
Hans-Peter Trah
Gottfried Flik
Affiliation:
Corporate Research, Robert Bosch GmbH, D 70049 Stuttgart, Germany
Heinz Eisenschmid
Affiliation:
Corporate Research, Robert Bosch GmbH, D 70049 Stuttgart, Germany
Carsten Raudzis
Affiliation:
Corporate Research, Robert Bosch GmbH, D 70049 Stuttgart, Germany
Frank Schatz
Affiliation:
Corporate Research, Robert Bosch GmbH, D 70049 Stuttgart, Germany
Winfried Schoenenborn
Affiliation:
Automotive Electronics Division, Robert Bosch GmbH, D 72762 Reutlingen, Germany
Hans-Peter Trah
Affiliation:
Corporate Research, Robert Bosch GmbH, D 70049 Stuttgart, Germany
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Abstract

According to market surveys automotive microsensors will evolve into a multi-billion dollar business by 2005. Key roles are attributed to inertial sensors for passenger safety systems, and mass flow and pressure sensors for engine management systems. Thin film techniques together with silicon bulk or surface micromachining have been established as preferential processes to achieve reduction of sensor size, weight and cost along with improvements of sensor functionality and reliability. Enhanced sensor performance often pushes the limits of process technology and therefore the need arises very early in the MEMS design process to identify materials and geometry related parameters which are critical with respect to their tolerance band specifications. In order to control these critical parameters, automated wafer level test procedures need to be developed (based preferentially on electrical quantities) and additionally considered for in the sensor design phase (design for test). In analogy to microelectronics 2D wafer maps of critical parameters may give hints on how to improve process stability and how to adapt the sensor design in order to optimize yield. Examples of critical model parameter variations include thermal conductivity, thickness, and shear modulus of thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B1.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] various sources: Strategy Analytics, Automotive Sensor Demand 1999 to 2008 (2001); Forward Concepts, Automotive Chips 2000 Rep. 1010 (2000); Reed Electronics Researcher BT 105 (2000).Google Scholar
[2] Gardner, W., Microsensors-Principles and Applications (Wiley, 1994).Google Scholar
[3] for an overview see: Digest of Technical Papers, International Conferences on Solid State Sensors and Actuators, Transducers, 1997 (Chicago), 1999 (Sendai) and 2001 (Munich).Google Scholar
[4] various authors in: MRS Bulletin, 26 (2001).Google Scholar
[5] Bishop, D., Gammel, P. and Giles, R., Physics Today 54, 10 (2001), 38.Google Scholar
[6] Marek, J., Microsystems in Automotive Applications, Micro System Technologies 98 43 (1998).Google Scholar
[7] Marek, J. and Illing, M., Microsystems for the Automotive Industry, IEDM Technical Digest (2000).Google Scholar
[8] Trah, H.-P., Franz, J. and Marek, J., Advances in Solid State Physics 39, (1999), 25.Google Scholar
[9] Ju, Y.S. and Goodson, K.E., J. Appl. Phys. 85, 10 (1999), 7130.Google Scholar
[10] Ju, Y.S., Kurabayashi, K. and Goodson, K.E., Thin Solid Films 339 (1999), 160.Google Scholar
[11] Staerz, T., Schmidt, U. and Voelklein, F., Sensors and Materials 7, 6 (1995), 395.Google Scholar
[12] Tai, Y.C., Mastrangelo, C.H. and Muller, R.S., Appl. Phys. 63 (1988), 1142.Google Scholar
[13] Goodson, K.E. and Flik, M.I., Appl. Mech. Rev. 47 (1994), 101.Google Scholar
[14] Cahill, D.G., Microscale Thermophys. Eng. 1 (1997) 85.Google Scholar
[15] Voelklein, F. and Baltes, H., Journal of Micromechanical Systems 1, 4 (1992), 193.Google Scholar
[16] Chen, G., Tien, C.L., Wu, X., and Smith, J.S., J. Heat Transfer 116 (1994), 325.Google Scholar
[17] Cahill, D.G., Rev. Sci. Instrum. 61 (1990), 802.Google Scholar
[18] Cahill, D.G., Katiyar, M. and Ableson, J.R., Phys. Rev. B 50 (1994), 6077.Google Scholar
[19] Cahill, D.G., Bullen, A. and Lee, S.M., High Temperatures – High Pressures 32 (2000) 136.Google Scholar
[20] Borca-Tasciuc, T., Kumar, A.R. and Chen, G., Rev. Sci. Instrum. 72, 4 (2001), 2139.Google Scholar
[21] Properties of Silicon, London: INSPEC (1988), 37.Google Scholar
[22] Herrmann, F., Hahn, D. and Büttgenbach, S.; Sensors and Actuators A 78 (1999), 99.Google Scholar
[23] Baer, R.L., Flory, C.A., Tom-Moy, M. and Solomon, D.S.: Proc. IEEE Ultrasonics Symposium (1992), 293.Google Scholar
[24] Martin, S. J., Ricco, A. J., Niemczyk, T. M. and Frye, G. C., Sensors and Actuators A 20, (1989), 253.Google Scholar
[25] Moriizumi, T., Unno, Y. and Shiokawa, S., Proc. IEEE Ultrasonics Symposium (1987), 579.Google Scholar
[26] Jakoby, B. and Vellekoop, M.J.; Smart Mater. Struct. 6 (1997), 668.Google Scholar
[27] Jakoby, B. and Vellekoop, M.J.; IEEE UFFC Transactions 45, 5 (1998).Google Scholar