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Microscopic Model for the Epitaxy of CaF2 ON Si(111)

Published online by Cambridge University Press:  25 February 2011

F. J. Himpsel ,
U. O. Karlsson ,
J. F. Morar ,
D. Rieger  and
J. A. Yarmoff
F. J. Himpsel
Affiliation:
IBM Thomas J. Watson Research Center, P.O.B. 218, Yorktown Heights, NY 10598, USA
U. O. Karlsson
Affiliation:
IBM Thomas J. Watson Research Center, P.O.B. 218, Yorktown Heights, NY 10598, USA
J. F. Morar
Affiliation:
IBM Thomas J. Watson Research Center, P.O.B. 218, Yorktown Heights, NY 10598, USA
D. Rieger
Affiliation:
IBM Thomas J. Watson Research Center, P.O.B. 218, Yorktown Heights, NY 10598, USA
J. A. Yarmoff
Affiliation:
IBM Thomas J. Watson Research Center, P.O.B. 218, Yorktown Heights, NY 10598, USA
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Abstract

The epitaxy of CaF2 on Si(111) is characterized on an atomic scale using various photoelectron spectroscopy techniques. We find both F and Ca bonding to Si with Ca forming most of the interface bonds. The bonding orbital is found at 1.5 eV below the valence band maximum of Si. It consists of the Si3p-like dangling bond orbital and the 4s electron of Ca1+. Ca has changed its oxidation state at the interface from Ca2+ to Ca1+, which is demonstrated by the multiplet structure of the Ca 2p absorption edge. The electronic properties of the CaF2 interface layer are altered dramatically relative to bulk material, with the band gap shrinking from 12 eV to about 2 eV. Such strong effects raise prospects for creating new materials in the vicinity of an interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 181
Copyright
Copyright © Materials Research Society 1987

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References

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