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Microscopic Mechanisms for Reduced Static Dielectric Constants in Si-O-F Alloy Films

Published online by Cambridge University Press:  15 February 2011

H. Yang  and
G. Lucovsky
H. Yang
Affiliation:
Departments of Chemistry, Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Departments of Chemistry, Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

There is considerable interest in insulators with static dielectric constants lower than SiO2; an alloy system attracting recent attention is Si-O-F. Alloying of F atoms into plasma-deposited SiO2 films leads to major changes in the SiO2 bond-stretching and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant. These changes are explained by F induced modifications of force constants and effective charges of the neighboring Si-O-Si groups.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 273
Copyright
Copyright © Materials Research Society 1997

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References

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