Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-08T03:55:46.900Z Has data issue: false hasContentIssue false
  • English
  • Français

Microscopic Identification of Defects in Semiconductors by Electron-Spin-Resonance and Related Techniques

Published online by Cambridge University Press:  28 February 2011

Jorgen Schneider
Jorgen Schneider*
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik Eckerstraβe 4, D-7800 Freiburg, Federal Republic of Germany
Get access

Abstract

This talk will review and compare very basic intrinsic and extrinsic paramagnetic defect structures which are characteristic for group IIB-VI, III-V and elemental semiconductors. The case of cation vacancy related defects in ZnS and ZnSe, that of antisite defects in GaP and GaAs and that of deep impurity donors in IIB-VI semiconductors and silicon will be treated as representative examples, thus illustrating the possibilities (and limitations) of the ESR technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 13
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fletcher, R.C., Yager, W.A., Pearson, G.L., Holden, A.N., Read, W.T., and Merrit, F.R., Phys. Rev. 94, 1392 (1954).Google Scholar
[2] For a review of the early ESR work on ZnS and ZnSe see Schneider, J. in II-VI Semiconducting Compounds, Thomas, D.G. Ed., Benjamin, W.A., New York 1967, p. 40.Google Scholar
[3] Watkins, G.D., Phys. Rev. Lett. 33, 223 (1974).CrossRefGoogle Scholar
[4] Schneider, J., Röuber, A., Dischler, B., Estle, T.L. and Holton, W.C., J. Chem. Phys. 42, 1839 (1965).Google Scholar
[5] James, J.R., Nicholls, J.E., Cavenett, B.C., Davies, J.J. and Dunstan, D.J., Solid State Commun. 17, 969 (1975).CrossRefGoogle Scholar
[6] Watkins, G.D., Intrinsic Defects in II-VI Compounds ARL TR 75-0011 (Springfield, VA 22151: NTIS, Clearinghouse, 1975).Google Scholar
[7] Schneider, J., Dischler, B., and Räuber, A., J. Phys. Chem. Solids 31, 337 (1970).Google Scholar
[8] Nicholls, J.E., Davies, J.J., Poolton, N.R.J., Mach, R., and MUller, G.O., J. Phys. C: Solid State Phys. 18, 455 (1985), and references therein.CrossRefGoogle Scholar
[9] Schneider, J., Mat. Res. Soc. Symp. Proc. Vol. 14, 225 (1983), and references therein.Google Scholar
[10] Weber, E. R., and Schneider, J., Physica 116 B, 398 (1983), and references therein.Google Scholar
[11] Kaufmann, U., Schneider, J., and RUuber, A., Appl. Phys. Lett. 29, 312 (1976).Google Scholar
[12] Kennedy, T.A. and Wilsey, N.D., Appl. Phys. Lett. 44, 1089 (1984).CrossRefGoogle Scholar
[13] Wagner, R.J., Krebs, J.J., Stauss, G.H., and White, A.M., Solid State Commun. 36, 15 (1980).Google Scholar
[14] Meyer, B.K., Spaeth, J.-M., and Scheffler, M., Phys. Rev. Lett. 52, 851 (1984).Google Scholar
[15] Hofmann, D.M., Meyer, B.K., Lohse, F., and Spaeth, J.-M., Phys. Rev. Lett. 53, 1187 (1984).Google Scholar
[16] Meyer, B.K., Hofmann, D.M., Lohse, F. and J. of Electr. Mater. 14a, 921 (1985). J.-M. Spaeth,Google Scholar
[17] Kaufmann, U., and Schneider, J., Festkbrperprobleme 20, 87 (1980).CrossRefGoogle Scholar
[18] Bishop, S.G., Shanabrook, B.V., and Moore, W.J., J. Appl. Phys. 56, 1785 (1984), and references therein.Google Scholar
[19] Woodhead, J., Newman, R.C., Grant, I., Rumsby, D., J. Phys. C: Solid State Phys. 16, 5523 (1983).CrossRefGoogle Scholar
[20] Watts, R.K., Holton, W.C., and Wit, M. de, Phys. Rev. B3, 404 (1971).CrossRefGoogle Scholar
[21] Barra, F. and Fisher, P. Phys. Lett. 27 A, 711 (1968).CrossRefGoogle Scholar
[22] Baxterand, J.E. Ascarelli, G., Phys. Rev. B 7, 2630 (1973).Google Scholar
[23] Watkins, G.D., in Radiation Damage in Semiconductors, Dunod, Paris 1965.Google Scholar
[24] Iida, T., J. Phys. Chem. Solids 33, 1423 (1972).CrossRefGoogle Scholar
[25] Brunthaler, G., Jantsch, W., Kaufmann, U., Phys. Rev. B 31, 1239 (1985).Google Scholar
[26] Brunthaler, G., Cox, R.T., Jantsch, W., J. of Electr. Mater. 14a, 1199 (1985).Google Scholar
[27] Ludwig, G.W., Phys. Rev. 137, A1520 (1965).CrossRefGoogle Scholar
[28] Grimmeiss, H.G., Janzén, E., Ennen, H., Wdrner, O. R., Holm, C., and Sirtl, E., Phys. Rev. B 24, 4571 (1981). and R.M. Ware, and J. Schneider, Kaufmann, and J. Schneider Schirmer, J. Schneider,Google Scholar
[29] Wagner, P., Holm, C., Sirtl, E., Oeder, R., and Zulehner, W., Festkbrperprobleme 24, 191 (1984), see also E. Janzbn, R. Stedman, G. Grossman, and H.G. Grimmeiss, Phys. Rev. B 29, 1907 (1984).Google Scholar
[30] Niklas, J.R., and Spaeth, J.M., Solid State Commun. 46, 121 (1983).Google Scholar
[31] Wbrner, R., and Schirmer, O.F., Solid State Commun. 51, 665 (1984).CrossRefGoogle Scholar
[32] Clerjaud, B., J. Phys. C: Solid State Phys., to be published.Google Scholar
[33] Weber, E.R., Appl. Phys. A 30, 1 (1983).CrossRefGoogle Scholar