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Micro-RBS Analysis of Masklessly Fabricated Structures

Published online by Cambridge University Press:  25 February 2011

A. Kinomura ,
M. Takai ,
T. Matsuo ,
M. Satou ,
M. Kiuchi ,
K. Fujii  and
S. Namba
A. Kinomura
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
M. Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
T. Matsuo
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
M. Satou
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
M. Kiuchi
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
K. Fujii
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
S. Namba
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Rutherford backscattering (RBS) analysis of small-sized structures, fabricated by laser chemical vapor deposition (LCVD) with a focused laser beam and ion implantation with a focused ion beam (FIB), has been performed by a microprobe with focused 1.5 MeV helium ions. Micro-RBS spectra and RBS-mapping images revealed a local distribution of masklessly deposited Mo layers on GaAs and local doses of masklessly implanted Au atoms in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 743
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Ehrlich, D. J. and Tsao, J. Y., J. Vac. Sci. Tech. B1 969, (1983)Google Scholar
2. Shiokawa, T., Kim, P. H., Toyoda, K., Namba, S., Gamo, K., Aihara, R. and Anazawa, N., Jpn. J. Appl. Phys. 24, L566 (1985)Google Scholar
3. Takai, M., Tsuchimoto, J., Nakai, H., Gamo, K. and Namba, S., Jpn. J. Appl. Phys. 23, L852 (1984)10.1143/JJAP.23.L852CrossRefGoogle Scholar
4. Gamo, K., Takakura, N., Samoto, N., Shimizu, R. and Namba, S., Jpn. J. Appl. Phys. 23, L293 (1987)10.1143/JJAP.23.L293Google Scholar
5. Principles and Applications of High-Energy Ion Microbeams, edited by Watt, F. and Grime, G. W. (Adam Hilger, Bristol, 1987)Google Scholar
6. Takai, M., Matsunaga, K., Inoue, K., Izumi, M., Gamo, K., Sato, M. and Namba, S., Jpn. J. Appl. Phys. 26, L550 (1987)10.1143/JJAP.26.L550Google Scholar
7. Inoue, K., Takai, M., Matsunaga, K., Izumi, M., Gamo, K., Namba, S. and Satou, M., Nucl. Instrum. and Methods B30, 580 (1988)Google Scholar
8. Kinomura, A., Takai, M., Inoue, K., Matsunaga, K., Izumi, M., Matsuo, T., Gamo, K., Namba, S. and Satou, M., Nucl. Instrum. and Methods B33, 862 (1988)CrossRefGoogle Scholar
9. Kinomura, A., Takai, M., Matsuo, T., Ujiie, S., Namba, S., Satou, M., Kiuchi, M., Fujii, K. and Shiokawa, T., in Proc. of the 6th Intern. Conf. on Ion Beam Modification of Materials, edited by Namba, S. (to be published in Nucl. Instrum. and Methods 1989)Google Scholar
10. Kinomura, A., Takai, M., Matsuo, T., Kiuchi, M., Fujii, K., Satou, M. and Namba, S., Jpn. J. Appl. Phys. 27, L1346 (1988)Google Scholar
ll. Takai, M., Inoue, H., Hashizume, Y. and Namba, S. (in preparation)Google Scholar