Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:59:48.234Z Has data issue: false hasContentIssue false
  • English
  • Français

Microraman Study of PbTiO3 Thin Film Prepared by Sol-Gel Technique

Published online by Cambridge University Press:  15 February 2011

E. Ching-Prado ,
A. Reynés-Figueroa ,
R. S. Katiyar ,
S. B. Majumder  and
D. C. Agrawal
E. Ching-Prado
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P.R. 00931.
A. Reynés-Figueroa
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P.R. 00931.
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P.R. 00931.
S. B. Majumder
Affiliation:
Indian Institute of Technology, Kanpur, India.
D. C. Agrawal
Affiliation:
Indian Institute of Technology, Kanpur, India.
Get access

Abstract

A PbTiO3 thin film prepared on silicon substrate by sol-gel technique has been studied by micro-Raman spectroscopy. The spectra, in comparison to the single crystal work, show high background in the low frequency region and Raman lines are broader, thus revealing the polycrystalline nature of the film. The frequencies of the Raman bands in the film are clearly shifted to lower frequencies compared to the corresponding ones in the single crystal or powder forms. This phenomenon is similar to the hydrostatic pressure effect on the Raman lines of PbTiO3 single crystal. The film, therefore, has grains under stress. This stress is caused by non-equilibrium defects and diffusion at the interface. Measurements at different film positions showed variation in the frequency and width of the Raman bands which are associated with the stress and grain size inhomogeneities. The measured shift in the Raman frequencies suggest grain sizes ≤l μm. XRD indicates grain size around 22 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 469
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1- Dey, S.K. and Zu Leeg, R., Ferroelecfrics, 112, 309 (1990).CrossRefGoogle Scholar
2- Takuchi, I., Pignolet, A., Wang, L., Proctor, M., Levy, F., and Schmid, P.E., J. Appl. Phys., 73 394 (1993).Google Scholar
3- Kwak, B. S., Boyd, E. P., and Erbil, A., Appl Phys. Lett., 53 1702 (1988).CrossRefGoogle Scholar
4- Qu, B., Kong, D., Zhang, P., and Wang, Z., Ferroelecfrics, 145 39 (1993).Google Scholar
5- Adachi, H., Mitsuya, T., Yamazaki, O., and Wasa, K., J. Appl. Phys., 60 736 (1986).Google Scholar
6- Jaccard, A., Känzig, W., and Petex, M., Helv. Phys. Acta 26 521 (1953).Google Scholar
7- Kanata, T., Yoshikawa, T., and Kubota, K., Solid State Comm., 62 765 (1987).CrossRefGoogle Scholar
8- Ishikawa, K., Yoshikawa, K., and Okada, N., Phys. Rev. B, 37 5852 (1988).Google Scholar
9- Nakamura, T., Takashige, M., Terauchi, H., Miura, Y., and Lawless, W., Jpn. J.Appl. Phys. 23, 1265 (1984).Google Scholar
10- Sanjurjo, J. A., López Cruz, E., and Burns, G., Phys. Rev. B, 28 7260 (1983).Google Scholar
11- Nelmes, R. J. and Katrusiak, A., J. Phys. C: Solid St. Phys., 19 L725 (1986).Google Scholar
12- Ager, J.W. III, Veirs, D. K., and Rosenblatt, G. M., Phys. Rev. B. 43 6491 (1991).CrossRefGoogle Scholar