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Microporous Ruthenium Oxide Films for Energy Storage Applications

Published online by Cambridge University Press:  18 March 2011

J.P. Zheng  and
Q.L. Fang
J.P. Zheng
Affiliation:
Department of Electrical and Computer EngineeringFlorida A&M University and Florida State UniversityTallahassee, FL 32310, USA
Q.L. Fang
Affiliation:
Department of Electrical and Computer EngineeringFlorida A&M University and Florida State UniversityTallahassee, FL 32310, USA
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Abstract

Highly porous ruthenium oxide films were prepared using ruthenium ethoxide solution at low temperatures. The specific capacitance of the ruthenium oxide film electrode made with ruthenium ethoxide solution is much higher than that made using the traditional ruthenium chloride solution. It was found that amorphous ruthenium oxide films with high porosity could be formed at temperatures of 100-200 °C. At temperatures above 250 °C, crystalline ruthenium oxide films were formed. Electrochemical capacitors were made with ruthenium oxide film electrodes and were tested under constant current charging and discharging. The maximum specific capacitance of 593 F/g was obtained from the electrode prepared at 200 °C. The interfacial capacitance increased linearly with increasing film thickness. A value of interfacial capacitance as high as 4 F/cm2 was obtained from the electrode prepared at 200 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 658: Symposium GG – Solid-State Chemistry of Inorganic Materials III , 2000 , GG97.1
Copyright
Copyright © Materials Research Society 2001

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References

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