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Micro-photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

Published online by Cambridge University Press:  01 February 2011

K. Sebald ,
H. Lohmeyer ,
J. Gutowski ,
S. Einfeldt ,
C. Roder  and
D. Hommel
K. Sebald
Affiliation:
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee, 28359 Bremen, Germany
H. Lohmeyer
Affiliation:
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee, 28359 Bremen, Germany
J. Gutowski
Affiliation:
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee, 28359 Bremen, Germany
S. Einfeldt
Affiliation:
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee, 28359 Bremen, Germany
C. Roder
Affiliation:
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee, 28359 Bremen, Germany
D. Hommel
Affiliation:
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee, 28359 Bremen, Germany
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Abstract

We present micro-photoluminescence measurements on unstructured InGaN/GaN quantum well samples. Single sharp emission lines were observed and their optical properties were studied as a function of temperature and excitation density. The experimental findings such as the independence of their spectral position on the excitation density and the observation of binding and antibinding multiexcitonic states give clear evidence for the existence of strong localization centers in the InGaN quantum well, which exhibit the same characteristics as they are known for quantum dot structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E5.3
Copyright
Copyright © Materials Research Society 2005

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References

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