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Published online by Cambridge University Press: 01 February 2011
Ferroelectric films are growing in significance as non-volatile memory devices, sensors and microactuators. The stress state of the film, induced by processing or constraints such as the substrate, strongly affects device behaviour. Thus it is important to be able to model the coupled and constrained behaviour of film material. This work presents a preliminary study of the application of micromechanical modelling to ferroelectric films. A self-consistent micromechanics model developed for bulk ferroelectrics is adapted for thin film behaviour by incorporating features such as grain structure, mechanical clamping by the substrate, residual stresses, and crystallographic orientation of the film.