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Microfields Induced by Random Compensated Charge Pairs in Ferroelectric Materials

Published online by Cambridge University Press:  01 February 2011

Frank J. Crowne ,
Steven C. Tidrow ,
Daniel M. Potrepka  and
Arthur Tauber
Frank J. Crowne
Affiliation:
RF Electronics Division, Army Research Laboratory, Adelphi, MD 20783-1197, U.S.A.
Steven C. Tidrow
Affiliation:
RF Electronics Division, Army Research Laboratory, Adelphi, MD 20783-1197, U.S.A.
Daniel M. Potrepka
Affiliation:
RF Electronics Division, Army Research Laboratory, Adelphi, MD 20783-1197, U.S.A.
Arthur Tauber
Affiliation:
RF Electronics Division, Army Research Laboratory, Adelphi, MD 20783-1197, U.S.A.
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Abstract

The dc and microwave responses of the BaxSr1-x (X,Y)yTi1-yO3 family of ferroelectric compounds with various substitutional additives X3+, Y5+ are analyzed by combining the random-field technique with the mean-field (Landau-Devonshire) theory of ferroelectricity, along with a self-consistent computation of the dielectric constant of the host material in the presence of the impurity fields. The fields in the material are assumed to arise from charge compensation at the Ti4+ sites, leading to permanent dipoles made up of the resulting positive and negative ions separated by a few lattice constants. It is shown that whereas completely random placement of positive and negative ions generates a Holtsmark distribution of electric field, with infinite second moment and hence extremely large fluctuations in field strength, the association of ionized impurities into permanent dipoles leads to much lower fluctuations in field and a distribution with finite second moment, which makes a self-consistent dielectric constant meaningful.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 720: Symposium H – Materials Issues for Tunable RF and Microwave Devices III , 2002 , H5.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Landau, L. D. and Lifshits, I. M., Electrodynamics of Continuous Media (Pergamon Press, London, 1960), §13.Google Scholar
2. Kane, E., Phys. Rev. 131, 79 (1963).Google Scholar
3. Halperin, B. I. and Lax, M., Phys. Rev. 148, 722 (1966).Google Scholar
4. Markov, A. A., Wahrscheinlichkeitsrechnung (Leipzig, 1912), §16 and §33.Google Scholar
5. Holtsmark, J., Ann. der Physik 58, 577 (1919).Google Scholar
6. Chandrasekhar, S., Rev. Mod. Phys. 15, 1 (1943).Google Scholar
7. Anderson, P. W., Phys. Rev. 109, 1492 (1958).Google Scholar
8. Stoneham, A. M., Rev. Mod. Phys. 41, 82 (1969).Google Scholar
9. Vugmeister, B. E. and Glinchuk, M. D., Rev. Mod. Phys. 62, 993 (1990).Google Scholar
10. Ma, S. K., Phys. Rev. B 22, 4484 (1980).Google Scholar
11. Devonshire, A. F., “Theory of Ferroelectrics,” Adv. in Phys. 3, 85 (1954).Google Scholar
12. Potrepka, D. et al., session H, talk 5.5 of this conference.Google Scholar
13. Potrepka, D. M., Tidrow, S. C., and Tauber, A., Mat. Res. Soc. Symp. Proc. Vol. 656E, p. DD5.9 (2001); D. M. Potrepka, S. C. Tidrow, and A. Tauber, to be published in Integrated Ferroelectrics, Vol. 42 (April 2002).Google Scholar