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Microfabrication Technologies for Advanced VLSI Devices

Published online by Cambridge University Press:  28 February 2011

Y. Horiike ,
R. Yoshikawa ,
H. Okano ,
M. Nakase ,
H. Komano  and
T. Takigawa
Y. Horiike
Affiliation:
Toshiba Research and Development Center, VLSI Research Center, Komukai Toshibacho 1, Saiwaiku, Kanagawa, Japan, 210.
R. Yoshikawa
Affiliation:
Toshiba Research and Development Center, VLSI Research Center, Komukai Toshibacho 1, Saiwaiku, Kanagawa, Japan, 210.
H. Okano
Affiliation:
Toshiba Research and Development Center, VLSI Research Center, Komukai Toshibacho 1, Saiwaiku, Kanagawa, Japan, 210.
M. Nakase
Affiliation:
Toshiba Research and Development Center, VLSI Research Center, Komukai Toshibacho 1, Saiwaiku, Kanagawa, Japan, 210.
H. Komano
Affiliation:
Toshiba Research and Development Center, VLSI Research Center, Komukai Toshibacho 1, Saiwaiku, Kanagawa, Japan, 210.
T. Takigawa
Affiliation:
Toshiba Research and Development Center, VLSI Research Center, Komukai Toshibacho 1, Saiwaiku, Kanagawa, Japan, 210.
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Abstract

Recent progress in microfabrication technologies for advanced VLSI devices, such as 16M and 64MDRAM, is presented. First, an EB delineator with a vector-scanned VSB on a moving stage has been developed for printing 0.25 μm patterns employing PMMA, high dose exposure, and 50 KeV EB. Optical lithography also has been extended toward lower submicron geometry. A Krf excimer laser reduction projection system, using a quartz/CaF2 lens, resolves successfully 0.35 μm patterns. Ga field ion beam technology has been developed with new applications in fuse-cutting of redundancy and in optimizing sense amplifier by cutting transistor gates in the SRAM device. For fine line etching technology, collimated reactive ions produced by 10-3 Torr magnetron discharge achieves deep Si trench etching and tapered Al etching by using a polymer deposition process in addition to the original thin sidewall film. Finally, a damage-free excimer laser etching process has been developed which can etch n+ poly-Si with resist mask and with pattern transfer using an optics down to 0.5 μm and 0.9 μm resolutions respectively.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 17
Copyright
Copyright © Materials Research Society 1987

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References

1. Miller, V., Stover, H.L.; Sol. St. Technol., 28 (1), Jan., 127 (1985).Google Scholar
2. Pfeiffer, H.C.; J. Vac. Sci. Technol., 12, 6, Nov./Dec. 1170 (1975).Google Scholar
3. Goto, E., Soma, T., and Idesawa, M.;J. Vac. Sci. Technol., 15 (3), May/June, 883 (1978).Google Scholar
4. R. Yoshikawa, H. Wada, M. Goto, H. Kusakabe, O. Ikenaga, S. Tamamushi, M. Ninomiya and T. Takigawa; To be submitted to J. Vac. Sci. & Technol.Google Scholar
5. Nakase, S. M., SPIE Vol.537, 160 (1985)Google Scholar
6. Pol, V., Bennevitz, J.H., Esher, G.C., Feldman, M., Firtion, V.A., Jewell, T.E., Wilcom, G.E. and Clemens, J.T., SPIE Vol.633, 6–16 (1986).Google Scholar
7. Moran, J.M. and Maydan, D.; J. Vac. Sci. Technol., 16 (6) 1620 (1979)Google Scholar
8. Griffing, B.F. and West, P.R.; Poplymer Engi. and Sci. 23, 17, 947 (1982).Google Scholar
9. Yamashita, K., Nomura, N. and Takemoto, T. ;Ext. Abstr. of 18th (1986 Inter) Conf. on Sol. St. 0ev. and Mat. Tokyo, 25 (1986).Google Scholar
10. Sato, T., Nakase, M. and Horiike, Y.; 47th Jpn. Appl. Phys. Fall. Meeting (Sapporo), Abst. NO.29aZF 6, 324 (1986) (in Japanese)Google Scholar
11. Komano, H., Ohmura, Y. and Takigawa, T.; 17th Symp. on Ion Implantation and Submicron Fabrication (March) Ext. Abstr. ′85 (1986)Google Scholar
12. Komano, H., Isobe, M. and Takigawa, T.; Proc. of 10th Symp. of ISIAT′86, 31 (1986)Google Scholar
13. Kinoshita, H., Kaneko, R., Takeuchi, N., Ishihara, T., Takei, H.;47th Jpn. Appl. Phys., Fall Meeting (Sapporo) Abstr. NO.28pZF 15, 322 (1986) (in Japanese)Google Scholar
14. Sekine, M., Arikado, T., Okano, H. and Horiike, Y.; Proc. of VLSI Symp. San Diego, 6 (1986)Google Scholar
15. Arikado, T., Sekine, M., Okano, H. and Horiike, Y., IEDM Technical Digest, Dec. 7–10, Los Angels, 54 (1986)Google Scholar
16. Okano, H., Horiike, Y. and Sekine, M.; Jpn. J. Appl. Phys., 24, 68 (1985)Google Scholar
17. Hayasaka, N., Okano, H., Sekine, M. and Horiike, Y.; Appl. Phys. Lett. 48 (17), 28 April, 1165 (1986)CrossRefGoogle Scholar
18. Hayasaka, N., Nakahara, N., Okano, H. and Horiike, Y., to be published.Google Scholar