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Microcrystallinity in a-Si & a-SiC Films Made by Hg-Sensitized Photo-CVD

Published online by Cambridge University Press:  25 February 2011

N. Saxena ,
C. M. Fortmann  and
T. W. F. Russell
N. Saxena
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE-19716.
C. M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE-19716.
T. W. F. Russell
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE-19716.
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Abstract

A model for the role of H atoms as an etchant specie during deposition of microcrystalline (μc) films of Si:H and SiC:H is explored. Growth rates and etch rates of films made by Hg-sensitized photo-CVD have been measured as a function of reactor pressure (between 5 and 0.5 torr) and H2 dilution (up to 30:1). Gas phase reactions and diffusion to the substrate of depositing and etching species, have been modelled. It is found that high H radical flux (not necessarily high H2 dilution) promotes μc film growth. There are two surface etching reactions by H radicals: (i) selective etching of uncoordinated Si surface atoms (amorphous phase) from the film, leaving behind the more etch-resistant μc phase; (ii) in SiC:H alloy systems, a selective etching of C species, causing a decrease in C incorporation into the growing microcrystalline film. Films with increasing carbon content do not contain a μc-SiC phase because hydrogen is not eliminated from the carbon containing film precursors, thus inhibiting the development of crystalline Si-C network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 99
Copyright
Copyright © Materials Research Society 1989

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References

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