Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T20:31:15.127Z Has data issue: false hasContentIssue false
  • English
  • Français

Micro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system

Published online by Cambridge University Press:  01 February 2011

Toru Ajiki ,
Isao Nakamura  and
Masao Isomura
Toru Ajiki
Affiliation:
Department of Electrical and Electronic Engineering, Tokai University 1117 kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Isao Nakamura
Affiliation:
Department of Electrical and Electronic Engineering, Tokai University 1117 kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Masao Isomura
Affiliation:
Department of Electrical and Electronic Engineering, Tokai University 1117 kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Get access

Abstract

Micro-crystalline silicon-germanium (μc-SiGe) films were prepared by the multi-target RF sputtering system using Ar and Ar-H2 mixture gases. The crystallization temperature of Si0.3Ge0.7 films is reduced from 600 °C to 400 °C by the introduction of H2 into the sputtering gases. The dark conductivity of 1.7x10-7 S/cm and one order of magnitude of photosensitivity are obtained with the H2/Ar flow ratio of 2. The activation energy of dark conductivity is 0.42 eV, which is a half of the energy gaps of Si0.3Ge0.7, and show that the films have intrinsic nature. Besides, the absorption coefficients are similar to those of single crystalline Si0.3Ge0.7. The results suggest that the H2 introduction is effective both to reduce the dangling bond defects and to decrease the crystallization temperature of the μc-SiGe films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A6.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Meier, J., Fluckiger, R., Keppner, H. and Shah, A., Appl. Phys. Lett. 65, 85 (1994).10.1063/1.112183Google Scholar
2 Yamamoto, K., JSAP International 7, 12 (2003).Google Scholar
3 Ganguly, G., Fukawa, M., Ikeda, T. and Matsuda, A., J. Non-Cryst, Solids 227-230, 1069 (1998).10.1016/S0022-3093(98)00295-6Google Scholar
4 Isomura, M., Nakahata, K., Shima, M., Taira, S., Wakisaka, K., Tanaka, M. and Kiyama, S., Sol. Energy Mater. & Sol. cells 74 519–524 (2002).10.1016/S0927-0248(02)00069-7Google Scholar
5 Hishikawa, Y., Namura, N., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Jpn. J. Appl. Phys 30 1008–1014 (1991).10.1143/JJAP.30.1008Google Scholar
6 Weber, J., Alonso, M. I., Phys, Rev, B 40, 5683 (1989).10.1103/PhysRevB.40.5683Google Scholar
7 Maiti, C K and Armstrong, G A: Application of Slicon-Germanium Heterostructure Device, (Institute of Physical Publishing, Northern Ireland, 2001), p.321.10.1887/0750307234Google Scholar