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Microcrystalline Silicon Solar Cells at Higher Deposition Rates by the VHF-GD

Published online by Cambridge University Press:  15 February 2011

P. Torres ,
J. Meier ,
M. Goetz ,
N. Beck ,
U. Kroll ,
H. Keppner  and
A. Shah
P. Torres
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
M. Goetz
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
N. Beck
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
U. Kroll
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
H. Keppner
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

A 7.7 % single junction cell efficiency for an entirely microcrystalline silicon (μc-SiH) device has recently been reported by our group [1]. This was achieved by applying the purifier technique, a technique which is indeed easier to handle than the earlier used “microdoping” approach. The purpose of the present paper is twofold: First to show in detail the impact on device performance when a gas purifier is used; and second to illustrate that the deposition rate of the active, absorbing i-layer can be increased from the former 1.55 Å/s up to 4.3 Å/s while still maintaining reasonable device performances. In the latter case a first n-i-p solar cell structure on an aluminium sheet could be fabricated with an efficiency of 4.9 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 883
Copyright
Copyright © Materials Research Society 1997

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References

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