Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T06:25:37.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Microcrystalline Silicon Films Produced by RF Magnetron Sputtering and the Effect of Diffrent Ambients on their Conductivity

Published online by Cambridge University Press:  21 February 2011

Ratnabali Berjee ,
A. K. Bandyopadhyay ,
S. N. Sharma ,
A. K. Patabyal  and
A.K. Barua
Ratnabali Berjee
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
A. K. Bandyopadhyay
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
S. N. Sharma
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
A. K. Patabyal
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
A.K. Barua
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
Get access

Abstract

Results on characterisation of undoped, μc-Si:H films prepared by rf magnetron sputtering technique are presented. Highly conducting films (10−3 Δ−cm−1) were obtained at fairly low rf power density (l.2W/cm2). Critical parameters for obtaining microcrystalline phase were identified. The effect of humid ambient on film properties was looked into.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 69
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kruangam, D., Hamaki, K., Nonomara, S., Okamoto, H. and Hamakawa, Y., Technical Digest of the International Photovoltaic Science and Engineering Conf., Kobe, 1984,Japan Convention Services, Tokyo, P437 (1984).Google Scholar
2. Moustakas, T.D., Tetrahedrally-Bonded Amorphous Semiconductors, Edited by Adler, David and Fritzsche, Hellmut (Plenum Publishing Corp.), P93 (1985).Google Scholar
3. Saito, N., Sannomiya, H., Yamaguchi, T. and Tanaka, N., Appl. Phys. A35, 241 (1984).Google Scholar
4. Ishida, H., Noda, M. and Shimizu, H., Jpn.J.Appl.Phys., 22, L73 (1983).Google Scholar
5. Shirafuji, J., Matsui, H., Narikawa, A., Inuishi, Y. and Tanaka, N., Solid State Commun. 45, 577 (1983).Google Scholar
6. Landauer, R., J. Appl. Phys. 23, 779 (1952).Google Scholar
7. Ibach, H., Wagner, H. and Bruchmann, D., Solid State Commun. 42, 457 (1982).Google Scholar
8. Tanielian, M., Chatani, M., Fritzsche, H., Smid, V. and Persans, P.D., J. Non-Cryst. Solids, 35&36, 575 (1980).Google Scholar