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Microbridge Testing of Thin Films Under Small Deformation

Published online by Cambridge University Press:  10 February 2011

T. Y. Zhang ,
Y. J. Su ,
C. F. Qian ,
M. H. Zhao  and
L. Q. Chen
T. Y. Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Y. J. Su
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
C. F. Qian
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
M. H. Zhao
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
L. Q. Chen
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Abstract

The present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 477
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Nix, W. D, Metall. Trans. A 20A, 2217 (1989).Google Scholar
2. Brotzen, F.R., Int. Mater. Rev. 39, 24 (1994).Google Scholar
3. Doerner, M.F., and Nix, W.D., Critical Rev. Solid State & Mater. Sci. 14, 225 (1988).Google Scholar
4. Vinci, R.P., and Vlassak, J.J., Annu. Rev. Mater. Sci. 26, 431 (1996).Google Scholar
5. Flinn, P.A., MRS Proceedings 130, 41 (1988).Google Scholar
6. Hong, S., Weihs, T.P., Bravman, J.C., and Nix, W.D., J. Electro. Mater. 19, 903 (1990).Google Scholar
7. Zhang, L.M., Uttamchandani, D., and Culshaw, B., Sensors & Actuators A 29, 79 (1991)Google Scholar
8. Knapp, J.A., Follstaedt, D.M., Myers, S.M., Barbour, J.C., and Friedmann, T.A., J. Appl. Phys. 85, 1460 (1999).Google Scholar
9. Hirth, J. P., and Lothe, J., Theory of Dislocations, 2nd ed. (John Wiley & Sons, Inc., 1982).Google Scholar
10. Zhang, T.Y., Su, Y.J., Qian, C.F., Zhao, M.H. and Chen, L.Q., Submitted to Acta Mater.Google Scholar