Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T03:53:54.373Z Has data issue: false hasContentIssue false
  • English
  • Français

A MHz Modulable Si-based LED Afforded by Engineering Light-emitting Defects in Si

Published online by Cambridge University Press:  31 January 2011

Norishige Tana-ami ,
Jun Igarashi ,
Yosuke Terada ,
Yuhsuke Yasutake  and
Susumu Fukatsu
Norishige Tana-ami
Affiliation:
[email protected], University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Jun Igarashi
Affiliation:
[email protected], University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Yosuke Terada
Affiliation:
[email protected], University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Yuhsuke Yasutake
Affiliation:
[email protected], University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Susumu Fukatsu
Affiliation:
[email protected]@mbe.c.u-tokyo.ac.jp, University of Tokyo, Graduate School of Arts and Sciences, Tokyo, Japan
Get access

Abstract

We demonstrate a Si-based light-emitting diode (LED) with MHz modulation capability containing a certain class of light-emitting defects in the active region. The emission spectra are characterized by a narrow peak centered at 900 meV (1377 nm), hereafter referred to as E-line, which is attributed to the {311} defects inherent to cubic crystals with the diamond sublattice. The luminescence intensity of the E-line was found to go through a maximum around 20K persisting above 150 K. In spite of the decay lifetimes even longer than 1μs, 31% amplitude modulation was achieved for 1-MHz rectangular pulses at 20 K while near 10-MHz bandwidth was obtained for dynamic operation with modulated pulse widths.

Keywords

Siluminescenceoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B03-03
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cloutier, S. G., Kossyrev, P. A., and Xu, J., Nature materials 4, 887 (2005).10.1038/nmat1530Google Scholar
2. Bao, J., Tabbal, M., Kim, T., Charnvanichborikar, S., Wlliam, J. S., Aziz, M. J., and Capasso, F., Opt. Express 15, 6727 (2007).10.1364/OE.15.006727Google Scholar
3. Yasutake, Y., Igarashi, J., Tana-ami, N., and Fukatsu, S., Opt. Express 17, 16739 (2009).10.1364/OE.17.016739Google Scholar
4. Reshchikov, M. A., Morkoc, H., Park, S. S. and Lee, K. Y., Appl. Phys. Lett. 78, 2882 (2001).10.1063/1.1370119Google Scholar
5. Mchedilidze, T., Arguirov, T., Jia, G., and Kittler, M., phys. stat. sol. (a) 204, 2229 (2007).10.1002/pssa.200675447Google Scholar