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Mg-doped N-polar InN Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Daisuke Muto ,
Hiroyuki Naoi ,
Shinya Takado ,
Hyunseok Na ,
Tsutomu Araki  and
Yasushi Nanishi
Daisuke Muto
Affiliation:
[email protected], Ritsumeikan Univ., Department of Photonics, 1-1-1 Noji-Higashi, Kusatsu, 525-8577, Japan, +81-77-561-2884, +81-77-561-3994
Hiroyuki Naoi
Affiliation:
[email protected], Ritsumeikan Univ., Center for Promotion of the COE Program, 1-1-1 Noji-Higashi, Kusatsu, 525-8577, Japan
Shinya Takado
Affiliation:
[email protected], Ritsumeikan Univ., Department of Photonics, 1-1-1 Noji-Higashi, Kusatsu, 525-8577, Japan
Hyunseok Na
Affiliation:
[email protected], Ritsumeikan Univ., Center for Promotion of the COE Program, 1-1-1 Noji-Higashi, Kusatsu, 525-8577, Japan
Tsutomu Araki
Affiliation:
[email protected], Ritsumeikan Univ., Department of Photonics, 1-1-1 Noji-Higashi, Kusatsu, 525-8577, Japan
Yasushi Nanishi
Affiliation:
[email protected], Ritsumeikan Univ., Department of Photonics, 1-1-1 Noji-Higashi, Kusatsu, 525-8577, Japan
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Abstract

We have investigated the growth properties of Mg-doped N-polar InN films grown by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). We found that the Mg-doped InN films had smaller grain size than non-doped films, and furthermore the grain size decreased with an increase in Mg doping amount. Non-doped InN exhibited a single X-ray diffraction (XRD) peak of (0002) h-InN. On the other hand, the Mg-doped InN produced a weak XRD peak of (111) c-InN in addition to a strong peak of (0002) h-InN. These results indicate that the Mg doping decreased the surface migration length of In atoms. From Hall-effect measurements, all the samples were shown to have n-type conductivity. Mg-doped InN grown with Mg cell temperatures of 130 and 135°C had carrier concentrations that were about half (i.e., ∼4.5×1018 cm−3) that of the non-doped InN. However, the carrier concentration tended to increase with further supply of Mg. These results indicate that Mg-doping causes a trade-off between a carrier decreasing effect from the Mg acceptors and a carrier increasing effect from defects caused by the poor surface migration of In atoms.

Keywords

nitrideMgmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I08-01
Copyright
Copyright © Materials Research Society 2007

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References

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