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Mg+ Ion Implantation into GaAs : Annealing and Photoluminescence Properties

Published online by Cambridge University Press:  26 February 2011

Yoshinori Takeuci ,
Yunosuke Makita ,
Masahiko Mori ,
Nobukazu Ohnishi ,
Hajime Shibata  and
Tokue Matsumori
Yoshinori Takeuci
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, 305 Japan, and on leave from Matsushita Electric Industrial Co., Ltd, Opto-electronics Laboratory, Semiconductor Research Center, Higashimita 3–10–1, Tama-ku, Kawasaki-shi, 214 Japan
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, 305 Japan
Masahiko Mori
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, 305 Japan
Nobukazu Ohnishi
Affiliation:
Institute of Fundamental Analysis, 3–24–3 Yoyogi, Shibuya-ku, 151 Japan
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, 305 Japan
Tokue Matsumori
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259–12 Japan
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Abstract

Mg ion-implantation was carried out into very pure GaAs made by molecular beam epitaxy, in which the dose of Mg atoms, [Mg] was varied from l×1015 to 1×1020 cm−3 . As a method of characterization, low temperature photoluminescence (PL) studies were carried out as a function of [Mg]. A new emission, denoted by [g-g] was observed between bound exciton emissions and the emission due to 1 and-to-acceptor pairs. It was found that [g-g] appears around [Mg]= 2×1016 cm−3 and becomes a dominant emission at [Mg] over l×1017 cm−3. A significant shift of [g-g] towards the lower energy side with increasing [Mg] was reproducibly obtained and its PL properties were carefully investigated in terms of annealing temperature, TA and excitation density. Results revealed that the implanted Mg atoms become optically active at TA over 600 [g-g] was suggested to be acceptor-acceptor pair, which is consistent with the theoretical explanation that its radiative mechanisms is ascribed to the pair between excited-state acceptors. The systematic energy shift inherent to [g-g] was attributed to the growing ionization energy of the pair with increasing pair distance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 483
Copyright
Copyright © Materials Research Society 1989

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References

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