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MeV Ion Implantation Doping of Diamond.

Published online by Cambridge University Press:  17 March 2011

S. Prawer ,
D.N. Jamieson ,
K.W. Nugent ,
R. Walker ,
C. Uzan-Saguy  and
R. Kalish
S. Prawer
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, 3052, Australia
D.N. Jamieson
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, 3052, Australia
K.W. Nugent
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, 3052, Australia
R. Walker
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, 3052, Australia
C. Uzan-Saguy
Affiliation:
Solid State Institute and Physics Department, Technion, Haifa, 32000, Israel
R. Kalish
Affiliation:
Solid State Institute and Physics Department, Technion, Haifa, 32000, Israel
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Abstract

Diamond-based semiconductor devices offer the promise of operation at high temperatures and under extreme radiation conditions. An essential step in the drive towards operational diamond-based electronic devices is the ability to controllably and reproducibly dope the diamond. Ion implantation is the method of choice for such doping because it offers precise control of the dopant concentration and spatially selective doping is achievable using standard masking techniques. However, compared to silicon, the doping of diamond is complicated by the tendency of the diamond to relax to graphite upon thermal annealing. Furthermore, even if graphitization can be avoided, the compensation of dopants by residual defects has proved in the past to be a limiting factor in obtaining very high mobility material. In this paper, we present a scheme for the effective doping of diamond using MeV ion-implantation. For MeV ion- implantation the doped layer is deeply buried under a cap of undamaged diamond, and so the scheme includes a method using pulsed laser irradiation for making electrical contact to the buried layer. We show that a boron doped layer fabricated by the MeV implantation scheme has, after suitable annealing and removal of these compensating/trapping defects, very high mobility and low compensation ratio. In fact, its electrical properties are quite similar to those of natural boron-doped type IIb diamond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O4.3
Copyright
Copyright © Materials Research Society 2001

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References

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