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Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

Published online by Cambridge University Press:  21 February 2011

J.K.N. Lindner ,
B. Götz ,
A. Frohnwieser  and
B. Stritzker
J.K.N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
B. Götz
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
A. Frohnwieser
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
B. Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

Well-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 877
Copyright
Copyright © Materials Research Society 1996

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