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Methane Plasma Source Ion Implanted Ti-6Al-4V

Published online by Cambridge University Press:  21 February 2011

Jie Chen ,
J. R. Conrad ,
R. A. Dodd  and
F. J. Worzala
Jie Chen
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
J. R. Conrad
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
R. A. Dodd
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
F. J. Worzala
Affiliation:
University of Wisconsin-Madison, Plasma Source Ion Implantation Program, Madison, WI 53706
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Abstract

Ti-6Al-4V alloy test coupons were ion implanted using methane Plasma Source Ion Implanter at an energy of 30 KeV. Multi-energy ion implantation, carbon film deposition as well as ion beam mixing were involved in this process. The resulted carbon profile is flat-top near the surface which forms a TiC layer. The implanted layer has demonstrated high load capacity and long life time under pin on disk wear test condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 11
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Vardiman, R. G., Mat. Res. Soc. Symp. Proc. Vol.27 (1984) 609.Google Scholar
2. Oliver, W. C., Hutchings, R., Pethica, J. B., Paradis, E. L. and Shuskus, A. J., Mat. Res. Soc. Symp. Proc. Vol.27 (1984) 705.Google Scholar
3. Bolster, R. N., Singer, I. L. and Vardiman, R. G., Surface and Coating Technology 33 (1987) 469–477 Google Scholar
4. Elder, J. E., Thamburaj, R., and Patnaik, P. C, International Materials Reviews Vol.33 No.6 (1988) 289.Google Scholar
5. Pivin, J. C., Pons, F., Takadoum, J. and Bllock, H. M., J. Mat. Sci. 22 (1987) 1087.Google Scholar
6. Conrad, J. R., Radtke, J. L., Dodd, R. A., Worzala, F. J., J. Appl. Phys. 62, (1987) 4591.Google Scholar
7. Conrad, J. R., Dodd, R. A., and Worzala, F. J., Qiu, X., Surface and Coating Technology, 36, (1988) 927.Google Scholar
8. Conrad, J. R., Baumann, S., Fleming, R., and Meeker, G. P., J. Appl. Phys. 65, (1989) 1707.Google Scholar
9. Conrad, J. R., Dodd, R. A., Worzala, F. J., Qiu, X., Post, R. S., ASM Conf. on Ion Implantation and Plasma-Assisted Processes for Industrial Applications, May 22–25, 1988, Atlanta, Georgia.Google Scholar
10. Yachibana, K., Nishida, M., Harima, H. and Urano, Y., J. Phys. D: Appl. Phys. 17 (1984) 1727–1742.Google Scholar
11. Chang, Soo Park, Bodart, Jefuey R., He-Xiang, Han, Fecdman, Bernard J., Mat. Res. Soc. Proc. Vol.68 (1986) 199.Google Scholar
12. Wahner, J., Wild, Ch., Bubenier, A., and Koidl, P., Mat. Res. Soc. Proc. Vol.68 (1986) 205.Google Scholar