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Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

Published online by Cambridge University Press:  26 February 2011

J. M. Gibson
J. M. Gibson*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 613
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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