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Metastable Defects and Stretched Exponentials

Published online by Cambridge University Press:  22 February 2011

David Redfield  and
Richard Bube
David Redfield
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
Richard Bube
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
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Abstract

Metastability of defects in semiconductors provides the basis for (1)An integrated picture of defects that includes the DX center in crystalline HI-V compounds, the dangling-bond defect in amorphous Si, and ‘self-compensation’ effects in I1-VI compounds. The unifying physical property is the ability of many foreign atoms to have two nearly equal-energy sites, one with a shallow electronic level and the other with a deep level. (2)Elucidation of stretched-exponential kinetics in these materials, including the first demonstrable microscopic model for them. This stretched-exponential model is a distribution of independent response times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 335
Copyright
Copyright © Materials Research Society 1994

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