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Metastable Defect at Si-SiO2 Interfaces

Published online by Cambridge University Press:  26 February 2011

Z. Jing ,
G. Lucovsky  and
J. L. Whitten
Z. Jing
Affiliation:
Departments of Physics, Chemistry, Materials Science and Engineering, and Electrical and Computer Engingeering, North Carolina State University, Raleigh, NC, 27695.
G. Lucovsky
Affiliation:
Departments of Physics, Chemistry, Materials Science and Engineering, and Electrical and Computer Engingeering, North Carolina State University, Raleigh, NC, 27695.
J. L. Whitten
Affiliation:
Departments of Physics, Chemistry, Materials Science and Engineering, and Electrical and Computer Engingeering, North Carolina State University, Raleigh, NC, 27695.
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Abstract

An important issue in semiconductor device operation is the rate at which current or voltage stress creates defects that degrade eventually device operation. Based on recent results on nitrided gate dielectrics, we have concluded that bonded-H at the Si-SiO2 interface plays a role in the formation of metastable defects that can be activated, and subsequently neutralized, by sequential trapping of injected holes and electrons. In this paper, differences in defect behavior for Si-SiO2 interfaces that have exposed to nitrogen (N-) atoms or N-H groups are discussed. Based on these results, a microscopic model for interfacial defects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 851
Copyright
Copyright © Materials Research Society 1995

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