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Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire

Published online by Cambridge University Press:  26 February 2011

Young-Woo Heo ,
B. S. Kang ,
L. C. Tien ,
Y. Kwon ,
J. R. La Roche ,
B. P. Gila ,
F. Ren ,
S. J. Pearton  and
D. P. Norton
Young-Woo Heo
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
B. S. Kang
Affiliation:
Chemical Engineering, University of Florida, Gainesville, Florida.
L. C. Tien
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
Y. Kwon
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
J. R. La Roche
Affiliation:
Chemical Engineering, University of Florida, Gainesville, Florida.
B. P. Gila
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
F. Ren
Affiliation:
Chemical Engineering, University of Florida, Gainesville, Florida.
S. J. Pearton
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
D. P. Norton
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, Florida
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Abstract

Single ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C, the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼-3V and a maximum transconductance of order 0.3 mS/mm. Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm2 /V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B8.1
Copyright
Copyright © Materials Research Society 2005

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References

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