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Metal-Organic Chemical Vapor Deposition of Metal Oxides: from Precursor Synthesis to Thin Films

Published online by Cambridge University Press:  10 February 2011

J. A. Belot ,
A. Wang ,
N. L. Edleman ,
J. R. Babcock ,
M. V. Metz ,
T. J. Marks ,
P. R. Markworth  and
R. P. H. Chang
J. A. Belot
Affiliation:
Department of Chemistry, [email protected]
A. Wang
Affiliation:
Department of Chemistry, [email protected]
N. L. Edleman
Affiliation:
Department of Chemistry, [email protected]
J. R. Babcock
Affiliation:
Department of Chemistry, [email protected]
M. V. Metz
Affiliation:
Department of Chemistry, [email protected]
T. J. Marks
Affiliation:
Department of Chemistry, [email protected]
P. R. Markworth
Affiliation:
Department of Materials Science and Engineering Materials Research Center, Northwestern University, Evanston, IL 60208–3113, USA
R. P. H. Chang
Affiliation:
Department of Materials Science and Engineering Materials Research Center, Northwestern University, Evanston, IL 60208–3113, USA
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Abstract

This contribution describes the synthesis, characterization, and implementation of new lanthanide and main group metal-organic chemical vapor deposition precursors based on the 2,2-dimethyl-5-N-2-methoxyethylimino-3-hexanonato ligand system. The new homoleptic, fluorinefree, low melting, and highly volatile complexes are ideally suited for oxide MOCVD, and in many applications are superior to standard β-diketonates while maintaining ease of synthesis and low cost. This is explicitly demonstrated by the growth of high quality CeO2/YBa2Cu3O7-δ multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 37
Copyright
Copyright © Materials Research Society 1999

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References

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