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Metal-Organic Chemical Vapor Deposition of Epitaxial Tl2Ba2Ca2Cu3O10−x Thin Films

Published online by Cambridge University Press:  15 February 2011

Bruce J. Hinds ,
Jon L. Schindler ,
Bin Han ,
Deborah A. Neumayer ,
Donald C. Degroot ,
Tobin J. Marks  and
Carl. R. Kannewurf
Bruce J. Hinds
Affiliation:
Department of Chemistry, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
Jon L. Schindler
Affiliation:
Department of Electrical Engineering and Computer Science, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
Bin Han
Affiliation:
Department of Electrical Engineering and Computer Science, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
Deborah A. Neumayer
Affiliation:
Department of Chemistry, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
Donald C. Degroot
Affiliation:
Department of Electrical Engineering and Computer Science, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
Tobin J. Marks
Affiliation:
Department of Chemistry, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
Carl. R. Kannewurf
Affiliation:
Department of Electrical Engineering and Computer Science, Science and Technology Center for Superconductivity and the Materials Research Center, Northwestern University, Evanston, IL 60208-3118
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Abstract

Superconducting thin films of Tl2Ba2Ca2Cu3O10−x (TL-2223) have been grown on single crystal (110) LaAlO3 using a two-step process. Ba2Ca2Cu3Ox precursor films are deposited via metal-organic chemical vapor deposition (MOCVD) in a horizontal hot walled reactor. The second generation precursors Ba(hfa)2•tet, Ca(hfa)2•tet, and Cu(hfa)2 (hfa = hexafluoroacetylacetonate, tet = tetraglyme) were used as volatile metal sources due to their superior volatility and stability. Tl was introduced into the film via a high temperature post anneal in the presence of a Tl2O3:BaO:CaO:CuO pellet (1:2:2:3 ratio). Low O2 partial pressures were used to reduce the temperature in which the TI-2223 phase forms and to improve the surface morphology associated with a liquid phase intermediate. Films are highly oriented with the c-axis perpendicular to the substrate and a-b axis epitaxy is seen from x-ray φ- scans. The best films have a resistively measured Tc of 115K and a magnetically derived Jc of 6×105 A/cm2 (77K, 0 T). Preliminary surface resistance measurements, using parallel plate techniques, give Rs = 0.35 mΩ at 5K (ω = 10 GHz).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 273
Copyright
Copyright © Materials Research Society 1994

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