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Metal-Organic Chemical Vapor Deposition of Aluminum from Trialkylamine Alanes

Published online by Cambridge University Press:  25 February 2011

M.E. Gross ,
L.H. Dubois ,
R.G. Nuzzo  and
K.P. Cheung
M.E. Gross
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
L.H. Dubois
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R.G. Nuzzo
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
K.P. Cheung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Trialkylamine alanes are attractive precursors for the metal-organic chemical vapor deposition (MOCVD) of aluminum thin films in microelectronics applications. The weak Al-N interaction and the absence of Al-C bonds (which decompose by highly activated processes) make these compounds excellent alternatives to the most widely studied Al CVD precursor, triisobutyl aluminum (TIBA). Solid trimethylamine alane (TMAA) and liquid triethylamine alane (TEAA) have vapor pressures at room temperature of 1 and 0.5 torr, respectively. In addition, these compounds are stable, non-pyrophoric, and are easily prepared. We report parallel studies of Al CVD in a low pressure, cold wall reactor and in an ultrahigh vacuum chamber to understand both the surface chemistry and the growth morphology. These studies, in turn, are compared with the decomposition chemistry and MOCVD characteristics of TIBA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 383
Copyright
Copyright © Materials Research Society 1991

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References

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