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Metal-Germanium Contacts and Germanide Formation

Published online by Cambridge University Press:  22 February 2011

E. D. Marshall ,
C. S. Wu ,
C. S. Pai ,
D. M. Scott  and
S. S. Lau
E. D. Marshall
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
C. S. Wu
Affiliation:
Present affiliation: AT&T Bell Labs, Murray Hill, N.J.07974
C. S. Pai
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
D. M. Scott
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
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Abstract

In this study, we survey germanide formation and characterize Schottky- barrier properties for a number of representative metals on Ge (Al, Ag, Au, Er, Ni, Pd, Pt, Ta and Ti). It is found that the germanide formation characteristics (sequence of phase formation, kinetics, moving species) are similar to those of the corresponding silicides. The Schottky-barrier heights, however, are all similar and centered around 0.59 eV arida re relatively insensitive to the metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 161
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. A.-Nicolet, M. and Lau, S.S., VLSI Electronics: Microstructure Science, edited by Einspruch, N. G. and Larrabee, G.B. (Academic Press, New York, 1983), Vol.6, p. 330–464.Google Scholar
2. Murarka, S. P., Silicides for VLSI Applications (Academic Press, New York, 1983).Google Scholar
3. Samsonov, G. V. and Bondarev, V.N., Germanides (Primary Sources, New York, 1970).Google Scholar
4. Lrimaldi, M. G., Wielunski, L., Nicolet, M.-A. and Tu, K.N., Thin Solid Films, 21, 207(1981).Google Scholar
5. Ottaviani, G., Canali, C., Ferrari, G., Ferrari, R., Manji, G., Prudenziati, M. and Lau, S.S., 47, 187(1977).Google Scholar
6. Wittmer, M., Nicolet, M.-A. and Mayer, J.W., Thin Solid Films, 42, 51(1977).CrossRefGoogle Scholar
7. Thanailakis, A. and Northrop, D.C., Solid-State Electron., 16, 1383(1973).Google Scholar
8. Chan, E. Y. and Card, H.C., International Electron Devices Meeting (IEDM) Technical Uigest, 653(1978).Google Scholar
9. Tu, K. N., Thompson, R.D. and Tsaur, B.Y., Appl. Phys. Lett., 38, 626(1981).CrossRefGoogle Scholar
10. Walser, R. M. and bene, R.W., Appl. Phys. Lett., 28, 624 (1976).Google Scholar
11. Tsaur, B. Y., Lau, S.S., Mayer, J.W. and Nicolet, M.-A., Appl. Phys. Lett., 38, 922(1981).CrossRefGoogle Scholar
12. Ho, K.T., Lien, C.-D., Shreter, U. and Nicolet, M.-A., J. Appl. Phys. 57, 227(1985).Google Scholar
13. Rhoderick, E. H., Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1978), ch. 2.Google Scholar
14. Brillson, L. J., Surface Science Reports, 2, 127(1982).Google Scholar
15. Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981), p. 257. If an effective Richardson constant of 50 A/cm2/K2 is used, which is quoted for Ge<111> [16], all measured barrier heights should be reduced by 0.03 eVGoogle Scholar
16. Crowell., C. L. and Sze, S.M., Solid-State Electron., 21. 1133 (1978).Google Scholar
17. Buchanan, D. A. and Card, H.C., IEEE Trans. Electron Devices, ED–29, 154 (1982).Google Scholar
18. Nicollian, E. H. and Sinha, A.K., in Thin Films – Interdiffusion and Reactions, edited by Poate, S. M., Tu, K.N. and Mayer, J.W., (Wiley, New York, 1978).Google Scholar
19. Bardeen, J., Phys. Rev., 71, 717(1947).CrossRefGoogle Scholar
20. Sankey, O. F., Allen, R.E. and Dow, J.D., J. Vac. Sci. Technol., 3, 491(1984).Google Scholar
21. Ihm, J., Louie, S.G. and Cohen, M.L., Phys. Rev. B, 18, 4172(1978).CrossRefGoogle Scholar
22. Quaresima, C., Perfetti, P., Daniels, R.R. and Margaritondo, G., J. Vac. Sci. Technol. A, 2, 524(1984).CrossRefGoogle Scholar