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Metal Removal by Wafer Spin Cleaning Process with Advanced Chemical Distribution System

Published online by Cambridge University Press:  21 February 2011

Fumitomo Kunimoto ,
Tadahiro Ohmi  and
Frederick W. Kern Jr
Fumitomo Kunimoto
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku UniversityAza Aoba, Aramaki, Aoba–ku, Sendai, Japan, 980.
Tadahiro Ohmi
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku UniversityAza Aoba, Aramaki, Aoba–ku, Sendai, Japan, 980.
Frederick W. Kern Jr
Affiliation:
IBM Corporation, General Technology Division in ESSEX Junction, Vermont, USA
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Abstract

In this report we studied the single wafer spin cleaning system. We found that spin cleaning efficiency increases as the flux of chemical is increased, as the cleaning time was extended. From the metal removal test, we found that we can greatly reduce both cleaning time and chemical consumption at the same time as compare to batch process. Furthermore, we found that spin cleaning efficiency is dependant on a combination of the two parameters, chemical flux and cleaning time. We have optimized the proper nozzle position for complete coverage of the wafer surface by analyzing the fluid dynamics of the liquid on the wafer surface during spin treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 313
Copyright
Copyright © Materials Research Society 1993

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References

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