Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T09:08:44.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal oxides as functional semiconductors. An inkjet approach

Published online by Cambridge University Press:  12 June 2013

Anna Vilà ,
Alberto Gomez ,
Luis Portilla ,
Marti Cirici  and
Juan Ramon Morante
Anna Vilà
Affiliation:
M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain.
Alberto Gomez
Affiliation:
M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain.
Luis Portilla
Affiliation:
M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain.
Marti Cirici
Affiliation:
M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain.
Juan Ramon Morante
Affiliation:
M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain. Institute for Research on Energy of Catalonia, Jardins de les Dones de Negre 1, 08930-Sant Adria de Besos, Spain.
Get access

Abstract

Inkjet printing provides an interesting technology for electronic devices, as it is a versatile minimum-waste cost-effective technique for direct writing on almost every surface without need of masks or sacrificial layers. Among the fields in which it has been tested, transparent and flexible electronics offer a variety of applications ranging from large-area roll-toroll (such as OLEDs for lighting or solar cells) to small low-consumption biocompatible devices such as biosensors.

This work aims to present some advances in the field of semiconductors synthesized by sol-gel and patterned by inkjet printing. Chemical routes are used to obtain suitable inks, based on salts of Ga, In, Zn, Cu and Sn and solvents as methoxyethanol. Inkjet printing provides thin layers 20-300nm thick, with morphology strongly depending on the materials. Different thermal treatments are tested, and some chemical and optical characterization of the obtained layers allows optimizing the technology for each material.

The effectiveness of the inks and the technique is demonstrated by the electronic behavior of thin-film transistors fabricated by the proposed technology. The different devices are compared, suggesting the properties of the different materials analyzed, as a step ahead in the development of a complete logic for such promising applications of the flexible electronics.

Keywords

solution depositionink-jet printingelectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1552: Symposium S – Nanostructured Metal Oxides for Advanced Applications , 2013 , pp. 45 - 50
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kawase, T., Moriya, S., Newsome, C. J. and Shimoda, T., “Inkjet Printing of Polymeric Field-Effect Transistors and Its Applications”, J. Appl. Phys. 44, 3649–3658 (2005).CrossRefGoogle Scholar
Parashkov, R., Becker, E., Riedl, T., Johannes, H-H. and Kowalsky, W.. “Large Area Electronics Using Printing Methods”, Proceedings of the IEEE 93(7), 1321 (2005).CrossRefGoogle Scholar
Hoffman, R.L., Norris, B.J. and Wager, J.F., “ZnO-based transparent thin-film transistors”, Appl. Phys. Lett. 82(5), 733 (2003).CrossRefGoogle Scholar
Barquinha, P., Vilà, A.M., Gonçalves, G., Pereira, L., Martins, R., Morante, J.R., and Fortunato, E., “Gallium–indium–zinc-oxide-based thin-film transistors: Influence of the source/drain material, ” IEEE Trans. Electron Devices 55(4), 954–960 (2008).CrossRefGoogle Scholar
Kawazoe, H., Yasukawa, M., Hyodo, H., Kurita, M., Yanagi, H., and Hosono, H., “P-type Electrical Conduction in Transparent Thin Films of CuAlO2 ”, Nature 389(6654), 939–42 (1997).CrossRefGoogle Scholar
Singh, A.K., Janotti, A., Scheffler, M. and Van der Walle, C.G., “Sources of Electrical Conductivity in SnO2 ”, Phys. Rev. Lett. 101, 055502 (2008).CrossRefGoogle Scholar
Ji, Z., He, Z., Song, Y., Liu, K. and Ye, Z., “Fabrication and Characterization of Indium-doped p-type SnO2 Thin Films”, J. Cryst. Growth 259, 282–85 (2005).CrossRefGoogle Scholar
Rafea, M.A. and Roushdy, N., “Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique”, J. Phys. D-Appl. Phys 42, 6 (2009).Google Scholar
Luzeau, P., Xu, X.Z., Lagues, M., Hess, N., Contour, J.P., Nanot, M., Queyroux, F., Touzeau, M. and Pagnon, D., “Copper oxide thin-film growth using an oxygen plasma source”, J. Vac. Sci. Technol. A 8(6), 3938 (1990).CrossRefGoogle Scholar
Raebiger, H., Lany, S. and Zunger, A., “Origins of the p-type nature and cation deficiency in Cu2O and related materials”, Physical Review B 76, 045209 (2007).CrossRefGoogle Scholar
Ray, S.C., “Preparation of copper oxide thin film by the sol-gel-like dip technique and study of their structural and optical properties”, Solar Energy Materials & Solar Cells 68, 307–312 (2001).CrossRefGoogle Scholar
Olziersky, A., Vilà, A., Morante, J.R., “Multicomponent oxide thin-film transistors fabricated by a double-layer inkjet printing process”, Thin Solid Films 520, 1334–1340 (2011).CrossRefGoogle Scholar
Kuo, Y.. “Thin Film Transistor Technology—Past, Present, and Future”. The Electrochemical Society Interface - Spring 2013, 55–61 (2013).CrossRefGoogle Scholar
Sung, S. Y., Kim, S. Y., Jo, K. M., Lee, J. H., Kim, J. J., Kim, S. G., Chai, K. H., Pearton, S. J., Norton, D. P., Heo, Y. W., “Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature”, Appl. Phys. Lett. 97, 222109 (2010).CrossRefGoogle Scholar