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Metal Oxide / Silicon Heterostructures: New Solutions for Different Optoelectronic Applications

Published online by Cambridge University Press:  10 February 2011

A. Malik  and
R. Martins
A. Malik
Affiliation:
FCT-UNL/CEMOP-UNINOVA, Monte de Caparica, Portugal.
R. Martins
Affiliation:
FCT-UNL/CEMOP-UNINOVA, Monte de Caparica, Portugal.
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Abstract

In this paper we report the success in fabricating FTO/Si surface-barrier photodiodes produced by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: 1. X-Ray detectors with energy resolution of 16.5% at 661.5 keV (137Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm2 operating at 5V reverse bias, scintillator based on monocrystalline Bi4Ge3O12 and preamplifier (noise of 250 e− RMS.); 2. Fastresponse surface-barrier FTO/I n−-n+ silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at λ = 0.85 μm; 3. Radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 μm thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the “critical fluence” value (3× 1014 cm−2 ) for neutron irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 375
Copyright
Copyright © Materials Research Society 1998

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