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Melt-Textured Growth of Grain Aligned Bulk Oxide Thermoelectrics

Published online by Cambridge University Press:  31 January 2011

Venkat Selvamanickam  and
Bo Zhang
Venkat Selvamanickam
Affiliation:
[email protected], University of Houston, Mechanical Engineering, 4800 Calhoun Rd, Houston, Texas, 77204-4006, United States, 713 743 4044, 713 743 4513
Bo Zhang
Affiliation:
[email protected], University of Houston, Mechanical Engineering, 77204, Texas, United States
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Abstract

A new process, based on melt processing has been investigated with oxide thermoelectrics to achieve long-range grain alignment for low resistivity as well as to embed secondary phase precipitates and associated crystal defects for low thermal conductivity. Melt-processing of Bi2Sr2Co2Ox and CaMnO3 has been studied. A high degree of (00l) grain alignment has been achieved by melt processing. Good values of Seebeck coefficient of nearly -250 μV/K were measured in the melt-processed CaMnO3. Secondary phases of Ca4Mn3O10 and CaMn2O4 are found to be trapped between the aligned grains which led to high electrical resistivity values and limited the figure of merit in our initial samples.

Keywords

thermoelectricoxidetexture
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1166: Symposium N – Materials and Devices for Thermal-to-Electric Energy Conversion , 2009 , 1166-N09-07
Copyright
Copyright © Materials Research Society 2009

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References

1 Nolas, G. S., Poon, J., and Kanatzidis, M., Mat. Res. Soc. Bull, 31, 199 (2006)Google Scholar
2 Terasaki, T., Sasago, Y., Uchinokura, K., Phys. Rev. B. 56, R1268 (1997)Google Scholar
3 Funahashi, R., Matsubara, I., Ikuta, H., Takeuchi, T., Mizutani, U., and Sodeoka, S., Jpn. J. Appl. Phys. 39, L1127 (2000)Google Scholar
4 Fujita, K., Mochida, T., Nakamura, K., Jpn. J. Appl. Phys. 40, 4644 (2001)10.1143/JJAP.40.4644Google Scholar
5 Salama, K., Selvamanickam, V., Gao, L., and Sun, K., Appl. Phys. Lett. 54, 2352 (1989)Google Scholar
6 Selvamanickam, V., Kirchoff, D., Oberly, C. E., Salama, K., Zhang, Y., and Salib, S., in High Temperature Superconductors : Synthesis, Processing, and Applications, ed. Balachandran, U. and McGinn, P. J., TMS, Warrendale, 1997, p. 117.Google Scholar
7 Murakami, M., Morita, M., Doi, K., and Miyamoto, K., Jpn. J. Appl. Phys. 28, 1189 (1989)10.1143/JJAP.28.1189Google Scholar
8 Flahaut, D., Mihara, T., Funahashi, R., J. Appl. Phys. 100, 084911 (2006)Google Scholar
9 Raveau, B., Zhao, Y., Martin, C., Hervieu, M., Maignan, A., J. Sol. State Chem. 149, 203 (2000)Google Scholar
10 Bocher, L., Aguirre, M. H., Logvinovich, D., Shkabko, A., Robert, R., Trottman, M., and Weidenkaff, A., Inorg. Chem, 47, 8077 (2008)Google Scholar
11 Horowitz, H. S. and Longo, J. M., Mater. Res. Bull. 13, 1359–1369 (1978).Google Scholar