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Melting and resolidification dynamics of a-Si and poly-Si thin films during excimer laser annealing

Published online by Cambridge University Press:  10 February 2011

Mutsuko Hatano ,
Seungjae Moon ,
Minghong Lee ,
Kenkichi Suzuki  and
Costas P. Grigoropoulos
Mutsuko Hatano
Affiliation:
Central Research Laboratory, Hitachi Ltd., Tokyo 185-8601, Japan Department of Mechanical Engineering, University of California, Berkeley, CA 94720
Seungjae Moon
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720
Minghong Lee
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720
Kenkichi Suzuki
Affiliation:
Electron Tube & Devices Division, Hitachi Ltd., Mobara 297, Japan
Costas P. Grigoropoulos
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720
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Abstract

The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in-situ experiments combining time-resolved (∼Ins) electrical conductance, optical reflectance/transmittance at visible and near-IR wavelength, and thermal emission measurements. The existence of partial and complete melting regimes is elucidated. In the partial melting regime, the maximum temperature remains close to the melting point of aSi, since the laser energy is consumed on the latent heat of phase-change. In the complete melting regime, substantial supercooling, followed by homogeneous nucleation is observed. These phase transformations are consistent with the recrystallized poly-Si morphologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 193
Copyright
Copyright © Materials Research Society 2000

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References

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