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Melting and Laser Annealing in Semiconductors using 0.485 μm and 0.193 μm Pulsed Lasers*

Published online by Cambridge University Press:  15 February 2011

J. Narayan ,
J. Fletcher  and
R. E. Eby
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Fletcher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. E. Eby
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

Annealing of displacement damage, the dissolution of boron precipitates, the formation of constitution supercooling cells, and the broadening of dopant profiles have been studied in laser annealed silicon. These samples were irradiated with a dye laser (λ = 0.485 µm, τ = 9 ns, E = 0.7–1.2 J cm−2) and an Excimer laser (λ = 0.193 µm, τ= 9 ns, E = 0.5–0.7 J cm−2) pulses. These results can be consistently interpreted by invoking melting during pulsed laser irradiation. Thus these results provide convincing evidence for the melting phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 409
Copyright
Copyright © Materials Research Society 1981

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Footnotes

1

Analytical chemistry Division.

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

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