Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T01:31:49.591Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanisms of Fatigue in Polysilicon Mems Structures

Published online by Cambridge University Press:  15 March 2011

P. Shrotriya ,
S. Allameh ,
A. Butterwick ,
S. Brown  and
W.O. Soboyejo
P. Shrotriya
Affiliation:
The Princeton Materials Institute and Department of Mechanical and Aerospace Engineering, Princeton University, 1 Olden Street, Princeton, NJ.
S. Allameh
Affiliation:
The Princeton Materials Institute and Department of Mechanical and Aerospace Engineering, Princeton University, 1 Olden Street, Princeton, NJ.
A. Butterwick
Affiliation:
Department of Applied Physics, University of Michigan, Ann Arbor, MI.
S. Brown
Affiliation:
Exponent Failure Analysis and Associates, 21 Strathmore Road, Natick, MA.
W.O. Soboyejo
Affiliation:
The Princeton Materials Institute and Department of Mechanical and Aerospace Engineering, Princeton University, 1 Olden Street, Princeton, NJ.
Get access

Abstract

Fatigue crack initiation is shown to be associated with the stress-assisted evolution of a surface silica layer that forms during the normal exposure of unpassivated polysilicon surfaces to lab air In-situ atomic force microscopy (AFM) techniques are used to reveal the evolution of overall surface topology during incremental cyclic deformation to failure. Linear perturbation analysis of stress-assisted dissolution is then utilized to predict the evolution of the surface morphology. The predictions from the perturbation analysis are shown to be consistent with measured surface morphologies obtained using AFM techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B2.3
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wise, K.D. and Najafi, K. Science, 254, 1335 (1991).Google Scholar
2. Madou, M., Fundamentals of Microfabrication, (CRC Press, New York, 1997).Google Scholar
3. Connally, J.A. and Brown, S.B., Science, 256, 1537, (1992).Google Scholar
4. Connally, J.A. and Brown, S.B., Experimental Mechanics, 33, 81, (1991).Google Scholar
5. Arsdell, W. Van and Brown, S., J. Microelectromech. Syst., 46, 320, (1999).Google Scholar
6. Kahn, H., Ballarini, R., Mullen, R. L. and Heuer, A. H., Proc. Roy. Soc., Series A, 455, 3807, (1990).Google Scholar
7. Muhlstein, C., Brown, S. and Ritchie, R. O. in: Mechanical properties of structural films, STP 1413, Muhlstein, C. and Brown, S. (Eds). (American society for testing and materials, West Conshohocken, PA, 2002).Google Scholar
8. Sharpe, W. N. Jr., Yuan, B. and Edwards, R. L., in Proc. Fatigue'99, (Higher Education Press, Beijing, P.R. China, 1999) pp.1837.Google Scholar
9. , Allameh, Gally, S. M., Brown, B., and Soboyejo, W. O. (2001). In: Mechanical properties of structural films, STP 1413, Muhlstein, C. and Brown, S. (Eds). (American society for testing and materials, West Conshohocken, PA, 2002)Google Scholar
10. Freeman, D. M., Aranyosi, A. J., Gordon, M. J., In: Proc. Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC. (Transducer Research Foundation, Cleveland, 1998) pp.150.Google Scholar
11. Kim, K. S., Hurtado, J. A. and Tan, H., Phys Rev. Lett., 83, 3872, (1999).Google Scholar
12. Yu, H. H. and Suo, Z., J. Appl. Phys., 87, 1211, (1999).Google Scholar
13. Iler, R. K., Chemistry of Silica, (John Wiley & Sons, New York, 1979).Google Scholar