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Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure

Published online by Cambridge University Press:  01 February 2011

Masato Koyama ,
Kyoichi Suguro ,
Chie Hongo ,
Mitsuo Koike ,
Yuichi Kamimuta ,
Masamichi Suzuki  and
Akira Nishiyama
Masato Koyama
Affiliation:
Advanced LSI Technology Laboratory
Kyoichi Suguro
Affiliation:
3Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 Japan
Chie Hongo
Affiliation:
Environmental Engineering and Analysis Center
Mitsuo Koike
Affiliation:
Environmental Engineering and Analysis Center
Yuichi Kamimuta
Affiliation:
Environmental Engineering and Analysis Center
Masamichi Suzuki
Affiliation:
Environmental Engineering and Analysis Center
Akira Nishiyama
Affiliation:
Advanced LSI Technology Laboratory
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Abstract

In this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B3.6
Copyright
Copyright © Materials Research Society 2002

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References

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