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Mechanism of Ion-Induced Solid-Phase Crystallization and Amorphization

Published online by Cambridge University Press:  25 February 2011

T.k. chaki
T.k. chaki*
Affiliation:
State University of New York, Department of Mechanical and Aerospace Engineering, Buffalo, NY 14260
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Abstract

A mechanism is proposed to explain ion-induced solid-phase epitaxial growth (SPEG). It is argued that radiation-enhanced diffusion in amorphous solid is the cause of ion-induced SPEG at relatively low temperatures. The atoms in the amorphous solid near the crystalline/amorphous interface adjust their positions to lattice sites due to a free energy decrease associated with the transformation from amorphous to crystalline solid. An expression for the velocity of ion-induced SPEG is derived. At low temperatures and high irradiation dose rates, a large number of atoms in the lattice gets displaced and the free energy of the crystalline solid can increase to such a value that the crystalline/amorphous interface may remain stationary. It is shown that the dose rate at which the interface remains stationary increases with the temperature, following an Arrhenius dependence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 173
Copyright
Copyright © Materials Research Society 1990

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References

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