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Mechanism of Cu removal during CMP in H2O2-glycine based slurries

Published online by Cambridge University Press:  10 February 2011

M. Hariharaputhiran ,
S. Ramarajan ,
Y Li ,
S.V. Babu  and
S.V. Babu
M. Hariharaputhiran
Affiliation:
Departments of Chemical Engineering
S. Ramarajan
Affiliation:
Departments of Chemical Engineering
Y Li
Affiliation:
Chemistry, Clarkson University
S.V. Babu
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY
S.V. Babu
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY
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Abstract

Hydroxyl radical generation has been observed during Cu CMP using hydrogen peroxide-glycine based slurries. While the Cu dissolution/polish rates increased with increasing glycine concentration, the copper dissolution rate decreased with increasing peroxide concentration indicating the occurrence of both dissolution and passive film formation during CMP. This is further confirmed by both in situ and ex situ electrochemical experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 129
Copyright
Copyright © Materials Research Society 2000

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References

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