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Mechanical Stress Sensors for Copper Damascene Interconnects

Published online by Cambridge University Press:  01 February 2011

Romain Delamare ,
Sylvain Blayac ,
Moustafa Kasbari ,
Karim Inal  and
Christian Rivero
Romain Delamare
Affiliation:
[email protected], Centre de Microelectronique de Provence, PS2, RESIDENCE CASTEL PRADO, 84 RUE DU ROUET, MARSEILLE, 13008, France
Sylvain Blayac
Affiliation:
[email protected], Centre de Microelectronique de Provence, GARDANNE, 13541, France
Moustafa Kasbari
Affiliation:
[email protected], Centre de Microelectronique de Provence, GARDANNE, 13541, France
Karim Inal
Affiliation:
[email protected], Centre de Microelectronique de Provence, GARDANNE, 13541, France
Christian Rivero
Affiliation:
[email protected], STMicroelectronics, ROUSSET, 13106, France
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Abstract

We propose embedded microsensors to investigate the mechanical stress in copper damascene lines in a standard CMOS microelectronic technology. Those sensors are based on silicon piezoresistive effect where strain in the active silicon is induced by orientated copper lines. The challenge is to correlate the electrical sensors signal directly to stress variation in lines.

We have performed electrical measurements of the structures as a function of temperature. A coupled analytical and Finite Element thermomechanical Model of the structure was developed and a good agreement with measurements was obtained.

Keywords

sensorstress/strain relationshipCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD03-01
Copyright
Copyright © Materials Research Society 2008

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References

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