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Mechanical Properties of Sputtered Silicon Oxynitride Films by Nanoindentation

Published online by Cambridge University Press:  01 February 2011

Yan Liu ,
I-Kuan Lin  and
Xin Zhang
Yan Liu
Affiliation:
[email protected], Boston University, Department of Manufacturing Engineering, 15 Saint Mary's Street, Brookline, MA, 02446, United States, (617) 358-1913
I-Kuan Lin
Affiliation:
[email protected], Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Brookline, MA, 02446, United States
Xin Zhang
Affiliation:
[email protected], Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Brookline, MA, 02446, United States
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Abstract

Silicon oxynitride (SiON) films with different oxygen and nitrogen content were deposited by RF magnetron sputtering. Fourier-transform infrared (FT-IR) spectroscopy study revealed that co-sputterred SiON films were composed of one homogeneous phase of random bonding O-Si-N network. Time-dependent plastic deformation (creep) of SiON films were investigated by depth-sensing nanoindentation at room temperature. Results from nanoindentation creep indicated that plastic flow was relatively less homogenous with increasing nitrogen content in film composition. A deformation mechanism based on atomic bonding structure and shear transformation zone (STZ) plasticity theory was proposed to interpret creep behaviors of sputtered SiON films.

Keywords

stress/strain relationshipsputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1049: Symposium AA – Fundamentals of Nanoindentation and Nanotribology IV , 2007 , 1049-AA05-17
Copyright
Copyright © Materials Research Society 2008

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References

[1] Habermehl, S., Glenzinski, A. K., Halliburton, W. M. and Sniegowski, J. J., Mater. Res. Soc. Symp. Proc. 605, 49 (2000).Google Scholar
[2] Oliver, W. C. and Pharr, G. M., J. Mater. Res. 19, 3 (2004).Google Scholar
[3] Philipp, H. R., J. Non-Cryst. Solids 8–10, 627 (1972).Google Scholar
[4] Lucovsky, G., Richard, P. D., Tsu, D. V., Lin, S. Y. and Markunas, R. J., J. Vac. Sci. Technol. A 4, 681 (1986).Google Scholar
[5] Tsu, D. V., Lucovsky, G. and Mantini, M. J., Phys. Rev. B 33, 7069 (1986).Google Scholar
[6] Li, H., Ngan, A. H. W. and J. Mater. Res. 19, 513 (2004).Google Scholar
[7] Argon, A. S., Acta. Metall. 27, 47 (1979).Google Scholar
[8] Langer, J. S., Phys. Rev. E 64, 0115041 (2001).Google Scholar