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Mechanical Characterization of High Aspect Ratio Silicon Nanolines

Published online by Cambridge University Press:  01 February 2011

Huai Huang ,
Huai Huang ,
Qiu Zhao ,
Zhiquan Luo ,
Jang-Hi Im ,
Paul S Ho ,
Min Kyoo Kang ,
Rui Huang  and
Michael W Cresswell
Huai Huang
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center,, the University of Texas at Austin, Austin, TX 78758, Austin, TX, 78758, United States, 512-471-8995, 512-471-8969
Huai Huang
Affiliation:
[email protected], Laboratory for Interconnect and Packaging, Microelectronics Research Center, University of Texas, Austin, TX, 78758, United States
Qiu Zhao
Affiliation:
[email protected], Laboratory for Interconnect and Packaging, Microelectronics Research Center, University of Texas, Austin, TX, 78758, United States
Zhiquan Luo
Affiliation:
[email protected], Laboratory for Interconnect and Packaging, Microelectronics Research Center, University of Texas, Austin, TX, 78758, United States
Jang-Hi Im
Affiliation:
[email protected], Laboratory for Interconnect and Packaging, Microelectronics Research Center, University of Texas, Austin, TX, 78758, United States
Paul S Ho
Affiliation:
[email protected], Laboratory for Interconnect and Packaging, Microelectronics Research Center, University of Texas, Austin, TX, 78758, United States
Min Kyoo Kang
Affiliation:
[email protected], University of Texas, Department of Aerospace Engineering and Engineering Mechanics, Austin, TX, 78712, United States
Rui Huang
Affiliation:
[email protected], University of Texas, Department of Aerospace Engineering and Engineering Mechanics, Austin, TX, 78712, United States
Michael W Cresswell
Affiliation:
[email protected], M&K Single-Crystal Standards, Frederick, MD, 21702, United States
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Abstract

In this study, we performed nanoindentation experiments on two sets of silicon nanolines (SiNLs) of widths 24 nm and 90 nm, respectively, to investigate the mechanical behavior of silicon structures at tens of nanometer scale. The high height-to-width aspect ratio (∼15) SiNLs were fabricated by an anisotropic wet etching (AWE) method, having straight and nearly atomically flat sidewalls. In the test, buckling instability was observed at a critical load, which was fully recoverable upon unloading. It was found that friction at the contact between the indenter and SiNLs played an important role in the buckling response. Based on a finite element model (FEM), the friction coefficient was estimated to be in a range of 0.02 to 0.05. The strain to failure was estimated to range from 3.8% for 90 nm lines to 7.5% for 24 nm lines.

Keywords

nano-indentationnanostructureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1086: Symposium U – Mechanics of Nanoscale Materials , 2008 , 1086-U05-07
Copyright
Copyright © Materials Research Society 2008

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References

1 Hoffmann, S., Utke, I., Moser, B., Michler, J., Christiansen, S. H., Schmidt, V., Senz, S., Werner, P., Gösele, U., and Ballif, C., Nano Lett., 6, 622 (2006).Google Scholar
2 Johansson, S., Schweitz, J.-A., Tenerz, L., and Tiren, J., J. Appl. Phys., 63, 4799 (1988).Google Scholar
3 Namazu, T., Isono, Y., and Tanaka, T. J., J. Microelectromechanical Systems, 9, 450 (2000).Google Scholar
4 Tan, E. P. S., and Lim, C. T., Composites Science and Technology, 66, 1102 (2006).Google Scholar
5 Tabib-Azar, M., Nassirou, M., Wang, R., Sharma, S., Kamins, T. I., Islam, M. S., and Williams, R. S., Appl. Phys. Lett., 87, 113102 (2005).Google Scholar
6 Bhushan, B., Phil. Trans. R. Soc. A, 366, 1499 (2008).Google Scholar
7 Riedo, E., and Brune, H., Appl. Phys. Lett., 83, 1986 (2003).Google Scholar
8 Xu, D., Ravi-Chandar, K., and Liechti, K. M., J. Colloid Interface Sci., 318, 507 (2008).Google Scholar
9 Li, B., Kang, M. K., Lu, K., Huang, R., Ho, P. S., Allen, R. A., and Cresswell, M. W., Nano Lett., 8, 92 (2008).Google Scholar
10 Cresswell, M. W., Guthrie, W. F., Dixson, R. G., Murabito, C. E., and Pinillos, J. V. M. De, J. Res. Natl. Inst. Stand. Technol., 111, 187 (2006).Google Scholar
11 Lee, H., Lee, J. H., and Pharr, G. M., J. Mech. Phys. Solid., 53, 2037 (2005).Google Scholar