Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:24:36.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical behavior of thin Cu films studied by a four-point bending technique

Published online by Cambridge University Press:  18 March 2011

Volker Weihnacht  and
Winfried Brückner
Volker Weihnacht
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtzstrasse 20, D-01069 Dresden/Germany, [email protected]
Winfried Brückner
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtzstrasse 20, D-01069 Dresden/, Germany
Get access

Abstract

Four-point bending experiments in combination with thermal cycling of thin films on substrates were performed in a dedicated apparatus. Strains up to ±0.8% could be imposed into Cu films of 0.2, 0.5, and 1.0 μm thickness on Si substrates by bending the substrates at various temperatures in high vacuum. After relief of the bending, the residual stress was measured by the wafer-curvature method. At temperatures below 250°C, the yield behavior is asymmetric in tension and compression. The amount of plastic strain introduced by external bending increases with film thickness, but the absolute values of the introduced plastic strains are very low throughout. At higher temperatures, there is no clear thickness dependence and no asymmetry in tension and compression. The results are discussed in connection with the formation of misfit dislocations during plastic deformation of thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P10.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Hommel, M., Kraft, O., and Arzt, E., J. Mater. Res. 14 (6), 2373 (1999).Google Scholar
[2]Nix, W.D., Mat. Sci. Eng. A 234, 38 (1997).Google Scholar
[3]Vlassek, J. and Nix, W.D., J. Mater. Res. 7, 3242 (1992).Google Scholar
[4]Baker, S.P. and Nix, W.D., J. Mater. Res. 9, 3131 (1994).Google Scholar
[5]Kraft, O., Hommel, M. and Arzt, E., Mat. Sci. Eng. A 288, 209 (2000).Google Scholar
[6]Keller, R.-M., Baker, S.P. und Arzt, E., Acta mater. 47, 415 (1999).Google Scholar
[7]Venkatraman, R., Mat. Res. Soc. Symp. Proc. 338, 215 (1994).Google Scholar
[8]Baker, S.P., Keller, R.-M., and Arzt, E., Mat. Res. Soc. Symp. Proc. 505, 605 (1998).Google Scholar
[9]Weihnacht, V., Brückner, W. and Schneider, C.M., Rev. Sci. Instrum. 71, 4479 (2000).Google Scholar
[10]Stoney, G., Proc. R. Soc. London, A 82, 172 (1909).Google Scholar
[11]Vinci, R.P., und, E.M. Zielinsky Bravman, J.C., Thin Solid Films 262, 142 (1995).Google Scholar
[12]Nix, W.D., Metall. Trans. 20A, 2217 (1989).Google Scholar
[13]Thompson, C.V., J. Mater. Res. 8 (2), 237 (1993).Google Scholar
[14]Nix, W.D., Scripta mater. 39, 545 (1998).Google Scholar
[15]Weihnacht, V. and Brückner, W., to be published in Acta Mater..Google Scholar