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Mechanical behavior of thin Cu films studied by a four-point bending technique

Published online by Cambridge University Press:  18 March 2011

Volker Weihnacht  and
Winfried Brückner
Volker Weihnacht
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtzstrasse 20, D-01069 Dresden/Germany, [email protected]
Winfried Brückner
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtzstrasse 20, D-01069 Dresden/, Germany
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Abstract

Four-point bending experiments in combination with thermal cycling of thin films on substrates were performed in a dedicated apparatus. Strains up to ±0.8% could be imposed into Cu films of 0.2, 0.5, and 1.0 μm thickness on Si substrates by bending the substrates at various temperatures in high vacuum. After relief of the bending, the residual stress was measured by the wafer-curvature method. At temperatures below 250°C, the yield behavior is asymmetric in tension and compression. The amount of plastic strain introduced by external bending increases with film thickness, but the absolute values of the introduced plastic strains are very low throughout. At higher temperatures, there is no clear thickness dependence and no asymmetry in tension and compression. The results are discussed in connection with the formation of misfit dislocations during plastic deformation of thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P10.1
Copyright
Copyright © Materials Research Society 2001

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References

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