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Mechanical Behavior of Contact Aluminum Alloy*

Published online by Cambridge University Press:  21 March 2011

David T. Read ,
Yi-Wen Cheng ,
J. David McColskey  and
Robert R. Keller
David T. Read
Affiliation:
National Institute of Standards and Technology, Materials Reliability Division 325 Broadway, Boulder, CO 80305-3328, USA.
Yi-Wen Cheng
Affiliation:
National Institute of Standards and Technology, Materials Reliability Division 325 Broadway, Boulder, CO 80305-3328, USA.
J. David McColskey
Affiliation:
National Institute of Standards and Technology, Materials Reliability Division 325 Broadway, Boulder, CO 80305-3328, USA.
Robert R. Keller
Affiliation:
National Institute of Standards and Technology, Materials Reliability Division 325 Broadway, Boulder, CO 80305-3328, USA.
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Abstract

We report the results of tensile tests of thin films of Al-0.5 % Cu deposited on bare silicon. This material was subjected to the complete CMOS fabrication process, including a high-temperature heat treatment. Contact metal makes the electrical connection between the metal wiring and the silicon transistors in a chip. Room-temperature values of yield strength, ultimate tensile strength, and elongation were all lower than the corresponding values found previously for pure electron-beam-evaporated aluminum films. The strengths and elongation decreased slightly as the specimen temperature was raised from 25 to 150°C. The slopes of the stress-strain curves from unloading-reloading runs were lower than the accepted Young's modulus of bulk polycrystalline aluminum. The results are interpreted with the help of scanning and transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L6.11.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

Contribution of the U. S. government, not subject to copyright in the U. S. A.

References

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