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Measurements of to Temperatures of Supersaturated Si-As Alloys

Published online by Cambridge University Press:  26 February 2011

Kwang-Ryeol Lee ,
Jeffrey A. West ,
Patrick M. Smith ,
M. J. Aziz  and
J. A. Knapp
Kwang-Ryeol Lee
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
Jeffrey A. West
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
Patrick M. Smith
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
M. J. Aziz
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87158
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Abstract

The congruent melting point, or To curve, of crystalline Si-As alloys has been measured in the range of 1.6 to 18.1 at. % arsenic by line source electron beam annealing. Alloys were created by ion implantation of As into 0.1mm Si-on-sapphire and crystallized by pulsed laser melting. To temperatures decrease from 1673±10K at 2.0 at.% As to 1516±30K at 18.1 at.% As. The results of these measurements are significantly higher than the previous results of studies using pulsed laser melting techniques. Advantages of the e-beam technique over previous techniques are discussed. Chemical free energy functions of the solid and liquid phases were calculated from existing thermodynamic data. The calculated To curve agrees with the measured values only in low concentration region (less than 8 at.%).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 301
Copyright
Copyright © Materials Research Society 1992

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