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Measurements of Ion-Implantation Damage in GaP*

Published online by Cambridge University Press:  15 February 2011

D. R. Myers ,
P. S. Peercy  and
P. L. Gourley
D. R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
P. L. Gourley
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

We have applied stress measurements using the cantilever beam technique and Raman spectroscopy to characterize the dose dependence of damage production for He+, C+, or Ar+ implants into GaP. Stress increases monotonically with dose until a speciesdependent critical dose is reached. Above that dose, the material yields at an integrated lateral stress of ∼2×105 dynes/cm2 corresponding to an expansion of ∼1% in the implanted volume. The dose dependence of stress scales well with the volume density of ion energy deposited into atomic collisions. Raman measurements indicate that the material is still crystalline when the yield stress is reached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 505
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789.

References

REFERENCES

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