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Measurements of Hydrogen Redistribution in Hot Electron Injection of Mos Capacitors

Published online by Cambridge University Press:  22 February 2011

A. D. Marwick ,
D. A. Buchanan ,
D. J. Dimaria  and
Phil Saunders
A. D. Marwick
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, and L. DORI, C.N.R. LAMEL Institute, Bologna
D. A. Buchanan
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, and L. DORI, C.N.R. LAMEL Institute, Bologna
D. J. Dimaria
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, and L. DORI, C.N.R. LAMEL Institute, Bologna
Phil Saunders
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, and L. DORI, C.N.R. LAMEL Institute, Bologna
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Abstract

Redistribution of hydrogen caused by hot electron injection has been studied in large Al-gate capacitors using internal photemission followed by hydrogen depth profiling with the 15 N nuclear reaction. A large peak of hydrogen (∼ 1015 at /cm2) at the Al/SiO2 interface due to a hydrated layer on the surface of the SiO2 was found to act as a source of hydrogen during the photoinjection. A small fraction of the hydrogen released from this peak was found to be re-trapped near the Si/;SiO2 interface if a field of >1 MV/cm was applied to the SiO2 during the injection. Up to 2 × 1014 atoms/cm2 of hydrogen were found to be trapped at this interface for injected fluences up to 5 C/cm2. These results are discussed in terms of current models of interface state generation involving hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 253
Copyright
Copyright © Materials Research Society 1993

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References

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