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Measurement of Work of Adhesion on Wafers for Direct Bonding

Published online by Cambridge University Press:  01 February 2011

Kevin T. Turner  and
S. Mark Spearing
Kevin T. Turner
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
S. Mark Spearing
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Abstract

The displacement loaded double cantilever beam (DCB), often referred to as the blade-insertion test or crack-opening method by the wafer bonding community, has become a common method for evaluating the work of adhesion of bonded wafer pairs. The test, while easy to perform, often yields results with large scatter and questionable accuracy. The mechanics of the specimen are investigated in detail in the current work. Expressions that demonstrate how wafer bow may lead to residual stresses that result in large errors in the calculated work of adhesion are developed. A three-dimensional finite element model is used to show that due to the circular wafer geometry and silicon anisotropy there is a large variation of the strain energy release rate across a straight crack front. The model is used to predict the actual crack front shape and shows good agreement with experiments. The results of the finite element simulations are compared to the traditional expression used for data reduction and implications of the model highlighted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 782: Symposium A – Micro- and Nanosystems , 2003 , A12.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Ploessl, A. and Kraeuter, G., Mater. Sci. Eng. R25, 1 (1999).Google Scholar
[2] Maszara, W.P., Goetz, G., Caviglia, A., and McKitterick, J.B., J. Appl. Phys. 64, 4943 (1988).Google Scholar
[3] Martini, T., Steinkirchner, J., and Goesele, U., J. Electrochem. Soc. 144, 354 (1997).Google Scholar
[4] Bagdahn, J., Petzold, M., Reiche, M., and Gutjahr, K., Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Science Technology and Applications, 1995, Vol. 95–7, p. 291.Google Scholar
[5] Pasquariello, D. and Hjort, Klas, J. Electrochem. Soc. 147, 2343 (2000).Google Scholar
[6] Hutchinson, J.W. and Suo, Z., Adv. Appl. Mech. 29, 63 (1992).Google Scholar
[7] Turner, K.T. and Spearing, S.M., J. Appl. Phys. 92, 7658 (2002).Google Scholar
[8] Turner, K.T. and Spearing, S.M., J. Appl. Phys. to appear January 1, 2004.Google Scholar
[9] Specifications for polished monocrystalline silicon wafers, SEMI M1–0302 (Semiconductor Equipment and Materials International, 2002)Google Scholar
[10] Krueger, R., NASA/CR-2002–211628, ICASE Report No. 2002–10 (2002).Google Scholar
[11] Hitchings, D., Robinson, P., and Javidrad, F., Comput. Struct. 60, 1093 (1996).Google Scholar